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Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions

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Komarov F., Vlasukova L., Milchanin O., Greben M., Parkhomenko I., Mudryi A., Wendler E., Zukowski P.
Acta Physica Polonica A
|
2014
|
vol. 125
|
issue 6
1288-1292
EN
Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
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