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EN
Spin Hall effect in a two-dimensional electron gas with uniform Dresselhaus and random Rashba spin-orbit interactions is considered theoretically. Using Kubo formalism we derive some analytical formula for the spin Hall conductivity. It is shown that the contribution due to randomly fluctuating Rashba field disappears in the limit of strong Dresselhaus coupling.
EN
We calculate topological contributions to the spin Hall and spin Nernst effects due to intrinsic spin-orbit interaction in a single-layer graphene. To describe electronic spectrum of the graphene we have assumed the k·p model as well as the full tight-binding Hamiltonian. The corresponding contributions to the spin Hall and spin Nernst effects have been determined using the linear response theory and Green function formalism.
EN
Spin Hall effect in a two-dimensional electron gas with uniform and random components of the Rashba spin-orbit interaction is considered theoretically. Relaxation time due to scattering on Rashba fluctuations is also calculated. It is shown that the presence of a uniform component of Rashba coupling not only modifies relaxation time, but also suppresses the contribution to the spin Hall conductivity due to random Rashba field.
EN
Spin Hall effect in a two-dimensional electron gas with the Rashba spin-orbit interaction is analyzed theoretically. We use the Keldysh technique for nonequilibrium processes, modified in order to take into account well-defined splitting of the Fermi surface due to strong spin-orbit coupling. Using such an approach, we reconsider the two-dimensional electron gas with the Rashba spin-orbit interaction and show that impurity scattering processes suppress the spin Hall effect.
EN
Within the Matsubara Green function formalism and linear response theory we considered theoretically the temperature dependences of the spin Hall effect for a two-dimensional gas with an isotropic k-cubed form of the Rashba interaction. We utilize a standard model for treating spin-orbit phenomena in p-doped semiconductor heterostructures and also for an electron gas formed at perovskite oxides interfaces.
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Anomalous Hall Effect in IV-VI Semiconductors

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EN
We consider theoretically the topological contribution to the anomalous Hall effect in narrow-gap IV-VI magnetic semiconductors in which the relativistic terms are relatively large and determine both the non-parabolicity of the energy spectrum and strong spin-orbit interaction. We use the relativistic Dirac model and linear response theory to calculate this contribution. Experimental data on the anomalous Hall effect in these compounds are also presented and discussed.
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