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Ultrafast Optical and Magneto-Optical Dynamics in Colossal-Magnetoresistance Manganites

100%
Dorosinets V., Richter P., Jakob G., Roskos H.
Acta Physica Polonica A
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2005
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vol. 107
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issue 1
211-214
EN
Transient pump-probe reflectance measurements on La_{0.67}Ca_{0.33}MnO_3/MgO and La_{0.67} Ca_{0.33}MnO_3/SrTiO_3 thin films reveal a hitherto unknown magnetization-dependent energy gap that determines the relaxation process of the optically excited charge carriers on the picosecond time scale. In the case of La_{0.67}Ca_{0.33}MnO_3/SrTiO_3, the subsequent reflectance dynamics at low temperatures is determined to be substrate-induced strain that drives the sample into a metastable state characterized by an increased number of paramagnetic domains.
2
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Investigation of Quantum Effects in Carbonaceous Materials Near the Metal-Insulator Transition by Means of THz Photoconductivity

88%
Dorosinets V., Ksenevich V., Seliuta D., Martūnas Z., Valušis G.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
875-878
EN
A series of carbonaceous fibers with conductivity tuned to the metal-insulator transition were prepared by heat treatment of chemically modified polymer precursors. Peculiar behaviour of the resistivity versus temperature dependence R(T) at low temperatures suggests quantum corrections to the Drude conductivity due to weak localization and electron-electron interaction dominating in the conductivity. The THz conductivity method is employed to study the modification of the density of states and provides evidence for a strong change in density of states at the Fermi level caused by the quantum effects.
3
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Electrical Properties and Magnetoresistance of Nanogranular SnO_2 Films

76%
Ksenevich V., Dovzhenko T., Dorosinets V., Bashmakov I., Melnikov A., Wieck A.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
1043-1046
EN
Magnetotransport properties of the nanogranular SnO_2 films were invesigated. Non-linear current-voltage (I-V) characteristics were observed at low temperatures. The temperature dependence of the resistance and non-ohmic I-V curves can be well approximated by fluctuation-induced tunnelling model, indicating importance of the contacts barriers between SnO_2 grains. Magnetoresistance was measured within temperature range 2-15.3 K and could be consistent with the variable-range hopping conduction mechanism due to existence of localized states on the surface of SnO_2 grains.
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