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Fabrication and Characterization of Transparent Tin Dioxide Films with Variable Stoichiometric Composition

100%

Ksenevich V., Adamchuk D., Odzhaev V., Zukowski P.

Acta Physica Polonica A

2015

vol. 128

issue 5

861-863

Tin dioxide films with variable stoichiometric composition were fabricated by means of dc magnetron sputtering followed by a 2-stage annealing process. The structural and electrical properties of tin dioxide films were investigated by means of the Raman spectroscopy and impedance spectroscopy, respectively. It was found that crystallinity and grain size of tin dioxide films increase with the increasing annealing temperature. The most conductive samples were obtained at the annealing temperature 375°C. Increasing of the impedance of films annealed at higher temperatures is explained by decrease of the concentration of oxygen vacancies.

EPR Investigations of Electrons and Neutrons Irradiated Cubic Boron Nitride

76%

Azarko I., Ignatenko O., Karpovich I., Odzhaev V., Kozlova E., Zhukowski P.

Acta Physica Polonica A

2013

vol. 123

issue 5

923-925

Microcrystals of cubic boron nitride powders synthesised under different conditions and further irradiated with neutrons and electrons have been investigated. It was found that some changes of the samples' paramagnetic properties depend on the electron irradiation dose. It was also shown that the initial boron type defects growth occurs under thermal neutron, as well as under fast neutrons irradiation. The nitrogen-containing defects concentration changes in a threshold manner.

Structure and Electron-Transport Properties of Photoresist Implanted by Sb^{+} Ions

64%

Vabishchevich N., Brinkevich D., Volobuev V., Lukashevich M., Prosolovich V., Sidorenko Y., Odzhaev V., Partyka J.

Acta Physica Polonica A

2011

vol. 120

issue 1

46-48

Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1 × 10^{15} ÷ 5 × 10^{16} cm^{-2} with the ion current density 4 μA/cm^2 have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.

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3 Acta Physica Polonica A

1 2015

1 2013

1 2011

3 Odzhaev V.

1 Adamchuk D.

1 Azarko I.

1 Brinkevich D.

1 Ignatenko O.

1 Karpovich I.

1 Kozlova E.

1 Ksenevich V.

1 Lukashevich M.

1 Partyka J.

1 Prosolovich V.

1 Sidorenko Y.

1 Vabishchevich N.

1 Volobuev V.

1 Zhukowski P.

1 Zukowski P.

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Fabrication and Characterization of Transparent Tin Dioxide Films with Variable Stoichiometric Composition

EPR Investigations of Electrons and Neutrons Irradiated Cubic Boron Nitride

Structure and Electron-Transport Properties of Photoresist Implanted by Sb^{+} Ions