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  1. 3 Acta Physica Polonica A

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  1. 2 2013

  2. 1 2012

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  1. 3 Al Orainy R.

  2. 1 Nagat A.

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A Contribution of Thermoelectric Properties of the Quaternary Chalcogenide Compound Tl_2GaInSe_4 Crystal

100%
Al Orainy R.
Acta Physica Polonica A
|
2013
|
vol. 124
|
issue 4
728-731
EN
Thermoelectric transport measurements were made on single crystal samples of Tl_2GaInSe_4. The crystal was prepared by a special design based on the Bridgman technique. Measurements of thermoelectric power were carried out in a special high vacuum-tight calorimeter when the direction of temperature gradient is perpendicular to the cleavage plane. The measurements covered a temperature range extending from 300 to 725 K. The results indicate P-type conductivity for our investigated samples. At room temperature the value of thermoelectric power was 735 μV/deg. The electron to hole mobility ratio was found to be 1.35. The effective mass of holes at room temperature was evaluated as 4.635×10^{-29} kg, while for electron was equal to 8.468×10^{-31} kg. The relaxation time of majority and minority carriers was estimated as τ_p=2.968×10^{-10} s and τ_n=7.326×10^{-12} s, respectively. Also, the diffusion coefficient of holes and electrons at room temperature was calculated and found to be 265.132 cm^2/s and 358.139 cm^2/s, respectively. The diffusion length of holes and electrons are found to be L_p=2.805×10^{-4} cm and L_n=5.122×10^{-5} cm. In addition to these pronounced parameters, the efficiency of thermoelectric element (figure of merit) was evaluated which leads to better applications in many fields.
2
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Interpretation of Switching Properties of InGaSe_2 Single Crystal

100%
Al Orainy R.
Acta Physica Polonica A
|
2012
|
vol. 121
|
issue 3
666-672
EN
The goal of this paper is to present experimental results of the switching effect and analyze qualitatively the influence of various factors, such as temperature, light illumination and sample thickness on switching behavior of the high quality ternary chalcogenide semiconductor InGaSe_2. Current-controlled negative resistance of InGaSe_2 single crystals has been observed for the first time. It has been found that indium gallium diselenide single crystals exhibit bistable or memory switching. The switching process takes place with both polarities on the crystal and has symmetric shapes. Current-voltage characteristics of Ag-InGaSe_2-Ag structures exhibit two distinct regions, high resistance OFF state and low-resistance ON state having negative differential resistance. InGaSe_2 is a ternary semiconductor exhibiting S-type I-V characteristics. The specimen under test showed threshold switching with critical field of the switching being 10^3 V/cm at room temperature.
3
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Preparation and Switching Behavior Characterization οf Some Quaternary Thallium Chalcogenide Compounds

63%
Al Orainy R., Nagat A.
Acta Physica Polonica A
|
2013
|
vol. 123
|
issue 1
121-125
EN
Investigation of the switching phenomenon on TlGaSSe single crystal revealed that it is typical for a memory switch. The switching process takes place with both polarities on the crystal and have symmetrical shapes. Current-voltage characteristics (CVC) of symmetrical Ag/TlGaSSe/Ag structures exhibit two distinct regions, high resistance "OFF" state and low resistance "ON" state having negative differential resistance. In addition, TlGaSSe is a quarternary semiconductor exhibiting S-type I-V characteristics. The experimental results indicate that the phenomenon in our sample is very sensitive to temperature; light intensity and sample thickness. The switching parameters were checked under the influence of different factors of the ambient condition. The present investigation is the first one on switching phenomenon of TlGaSSe.
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