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Electrical Properties of InGaP Doped with Si

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Litwin-Staszewska E., Trzeciakowski W., Piotrzkowski R., Gonzalez L.

Acta Physica Polonica A

1998

vol. 94

issue 3

431-435

We measured Hall concentration n in InGaP:Si epitaxial layers grown by MBE as a function of pressure P up to 2 GPa and of temperature T from 77 to 300 K. We interpreted our results in terms of the broad distribution of impurity states resonant with the conduction band. From the low-temperature n(P) dependence we can directly obtain the total density of impurity states around the Fermi level ρ(E_{F}). The Fermi level can be shifted with respect to impurity states by applying pressure and by using samples with different n. In this way we obtain ρ(E) in a wide energy range. We discuss the possible reasons for the observed broad distribution of ρ(E).

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1 Acta Physica Polonica A

1 1998

1 Gonzalez L.

1 Litwin-Staszewska E.

1 Piotrzkowski R.

1 Trzeciakowski W.

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Electrical Properties of InGaP Doped with Si