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1

Electron Temperature in Semi-Insulating GaAs for Low Electric Fields

100%

Zduniak A., Łusakowski J., Nowak G.

Acta Physica Polonica A

|

1992

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vol. 82

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issue 5

777-780

EN

Heating of electrons by electric fields smaller than that required for generation of domain oscillations was investigated in samples of EL2-rich semi-insulating GaAs. Current-voltage characteristics were measured as a function of temperature between 268 K and 330 K. They exhibit a sublinear shape which is interpreted as a result of an enhanced electron capture on the EL2. The capture rate and the electron temperature as a function of the electric field was determined. A fitting procedure gave the value of electron capture cross-section on the EL2 to be 2.7 × 10^{-13} cm^{2} which agrees with literature data.

2

On the Pinning of the Fermi Level by Germanium A_{1}^{0/+} Deep Donor State in GaAs Codoped with Ge and Te

100%

Słupiński T., Nowak G., Przybytek J., Stępniewski R.

Acta Physica Polonica A

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1993

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vol. 84

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issue 4

807-811

EN

We present the possibility of GaAs:Ge,Te crystals growth from the melt (liquid encapsulated Czochralski method) with partially occupied, at ambient pressure, the A_{1} localized electronic state of Ge_{Ga} impurity. In as-grown crystals the amphotericity of Ge and creation of defects (deep acceptor complexes, precipitates etc.) during cooling after growth limit the free electron concentration below the value necessary to populate the A_{1}^{0/+} level. Special annealing of the samples, which enlarges the free electron concentration, was used. The occupation of A_{1}^{0/+} level, at ambient pressure, was observed by pressure dependent Hall effect measurements.

3

Highly Compensated GaAs Crystal Obtained by Molecular CO Doping

76%

Bożek R., Korona K., Nowak G., Wasik D., Słupiński T., Kaczor P.

Acta Physica Polonica A

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1993

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vol. 84

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issue 4

669-672

EN

GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p_{CO}/p_{tot} = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10^{7} Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.

4

Blue Laser on High N_2 Pressure-Grown Bulk GaN

40%

Grzegory I., Boćkowski M., Krukowski S., Łucznik B., Wróblewski M., Weyher J., Leszczyński M., Prystawko P., Czernecki R., Lehnert J., Nowak G., Perlin P., Teisseyre H., Purgał W., Krupczyński W., Suski T., Dmowski L., Litwin-Staszewska E., Skierbiszewski C., Łepkowski S., Porowski S.

Acta Physica Polonica A

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2001

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vol. 100

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issue Supplement

229-232

EN

In this note we report briefly on the details of pulsed-current operated "blue" laser diode, constructed in our laboratories, which utilizes bulk GaN substrate. As described in Ref. [1] the substrate GaN crystal was grown by HNPSG method, and the laser structure was deposited on the conducting substrate by MOCVD techniques (for the details see Sec. 2 and Sec. 4 of Ref.~[1], respectively).

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4 Acta Physica Polonica A

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1 Boćkowski M.

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1 Dmowski L.

1 Grzegory I.

1 Kaczor P.

1 Korona K.

1 Krukowski S.

1 Krupczyński W.

1 Lehnert J.

1 Leszczyński M.

1 Litwin-Staszewska E.

1 Perlin P.

1 Porowski S.

1 Prystawko P.

1 Przybytek J.

1 Purgał W.

1 Skierbiszewski C.

1 Stępniewski R.

1 Suski T.

1 Teisseyre H.

1 Wasik D.

1 Weyher J.

1 Wróblewski M.

1 Zduniak A.

1 Łepkowski S.

1 Łucznik B.

1 Łusakowski J.

Electron Temperature in Semi-Insulating GaAs for Low Electric Fields

On the Pinning of the Fermi Level by Germanium A_{1}^{0/+} Deep Donor State in GaAs Codoped with Ge and Te

Highly Compensated GaAs Crystal Obtained by Molecular CO Doping

Blue Laser on High N_2 Pressure-Grown Bulk GaN