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Influence of terbium on structure and luminescence of nanocrystalline TiO2 thin films

100%
Wojcieszak D., Kaczmarek D., Domaradzki J., Lukowiak A., Strek W.
Open Physics
|
2013
|
vol. 11
|
issue 2
239-244
EN
In this work analysis of the structural and optical properties of TiO2 thin films doped with terbium has been described. Samples were prepared by a high energy reactive magnetron sputtering process under low pressure of oxygen plasma. X-ray diffraction results have shown that different TiO2 crystal forms have been produced, depending on the amount of Tb dopant. The undoped matrix had rutile structure with crystallites with a size of 8.7 nm, while incorporation of 0.4 at. % of Tb into the film during the sputtering process resulted in anatase structure with bigger crystallites (11.7 nm). Increasing the amount of terbium up to 2 at. % and 2.6 at. % gave rutile structure with crystallites with a size of 6.6 nm for both films. However, Raman spectroscopy has revealed that in the case of TiO2:(2 at. % Tb), except for the rutile form, the presence of fine-crystalline anatase was observed. Moreover, the lack of Raman peaks shift attests to the lack of stress in the titania lattice of all of the TiO2:Tb films. This fact indicates localization of Tb3+ ions on the surface of TiO2 nanocrystals. In the case of optical investigation, results have shown that doping with terbium has a significant influence on the properties of TiO2, but it does not decrease the high transparency of the matrix. The observed changes of the transmission characteristics were produced only due to modification of the TiO2:Tb structure. Photoluminescence measurements have shown that emission of light from TiO2:Tb films occurs when the amount of terbium is 2.6 at. %. Based on the obtained results a scheme of direct energy transfer from titanium dioxide matrix (with rutile structure) to Tb3+ ions has been proposed.
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Structural properties of transparent Ti-V oxide semiconductor thin films

86%
Sieradzka K., Kaczmarek D., Morgiel J., Domaradzki J., Prociow E., Adamiak B.
Open Physics
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2013
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vol. 11
|
issue 2
251-257
EN
Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO2-V2O3-V2O5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 105 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.
3
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Influence of nanocrystalline structure and composition on hardness of thin films based on TiO2

86%
Kaczmarek D., Wojcieszak D., Domaradzki J., Prociow E., Placido F., Lapp S., Dylewicz R.
Open Physics
|
2011
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vol. 9
|
issue 2
349-353
EN
In this work, the influence of Tb-doping on structure, and especially hardness of nanocrystalline TiO2 thin films, has been described. Thin films were formed by a high-energy reactive magnetron sputtering process in a pure oxygen atmosphere. Undoped TiO2-matrix and TiO2:Tb (2 at. % and 2.6 at. %) thin films, had rutile structure with crystallite sizes below 10 nm. The high-energy process produces nanocrystalline, homogenous films with a dense and close packed structure, that were confirmed by X-ray diffraction patterns and micrographs from a scanning electron microscope. Investigation of thin film hardness was performed with the aid of a nanoindentation technique. Results of measurements have shown that the hardness of all manufactured nanocrystalline films is above 10 GPa. In the case of undoped TiO2 matrix, the highest hardness value was obtained (14.3 GPa), while doping with terbium results in hardness decreasing down to 12.7 GPa and 10.8 GPa for TiO2:(2 at. % Tb) and TiO2:(2.6 at. % Tb) thin films, respectively. Incorporation of terbium into TiO2-matrix also allows modification of the elastic properties of the films.
4
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Photocatalytic properties of nanocrystalline TiO2 thin films doped with Tb

86%
Wojcieszak D., Kaczmarek D., Domaradzki J., Prociow E., Morawski A., Janus M.
Open Physics
|
2011
|
vol. 9
|
issue 2
354-359
EN
In this work photocatalytic properties of TiO2 thin films doped with different amount of Tb have been described. Thin films were prepared by high energy reactive magnetron sputtering process. Comparable photocatalytic activity has been found for all doped TiO2 thin films, while different amounts of Tb dopant (0.4 and 2.6 at. %) results in either an anatase or rutile structure. It was found that the terbium dopant incorporated into TiO2 was also responsible for the amount of hydroxyl groups and water particles adsorbed on the thin film surfaces and thus photocatalytic activity was few times higher in comparison with results collected for undoped TiO2 thin films.
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