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Strain Designed Magnetic Properties of III-V Magnetic Semiconductors

100%
Stagraczyński S., Jasiukiewicz C., Dugaev V., Berakdar J.
Acta Physica Polonica A
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2015
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vol. 128
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issue 2
219-221
EN
We present the theoretical analysis of a possibility of the magnetic anisotropy control using various components of the strain tensor in III-V magnetic semiconductor. We used the Kane model of the valence bands for the numerical simulations of the influence of strain on the Mn doped GaAs valence band structure. Calculating numerically the energy structure of deformed GaMnAs magnetic semiconductor, we also found the total energy of electron system as a function of orientation of the average magnetization vector. Our calculations show how the direction of the magnetization easy axis can be effectively rotated by using different types of deformation.
2
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Temperature Dependence of Spin Hall Effect in k-Cubed Rashba Model

100%
Krzyżewska A., Dyrdał A., Berakdar J.
Acta Physica Polonica A
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2018
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vol. 133
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issue 3
558-560
EN
Within the Matsubara Green function formalism and linear response theory we considered theoretically the temperature dependences of the spin Hall effect for a two-dimensional gas with an isotropic k-cubed form of the Rashba interaction. We utilize a standard model for treating spin-orbit phenomena in p-doped semiconductor heterostructures and also for an electron gas formed at perovskite oxides interfaces.
3
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Effect of Rashba Spin-Orbit Coupling on the Spin Polarization of Holes in Two-Dimensional GaMnAs Magnetic Semiconductors

100%
Stagraczyński S., Dugaev V., Berakdar J.
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EN
We consider the effect of the Rashba spin-orbital coupling in two-dimensional GaAs semiconductor heavily doped with Mn, on the spin polarization of holes. Due to the strong internal spin-orbit interaction in GaAs, the spin of a hole is not a good quantum number but the hole in some energy state has a certain mean value of spin, which can be strongly affected by the Rashba spin-orbital interaction related to the substrate for 2D material.
4
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Influence of Acoustic Phonons on the Magnetic Anisotropy in GaMnAs Magnetic Semiconductors

88%
Jasiukiewicz C., Stagraczyński S., Lehmann D., Dugaev V., Berakdar J.
Acta Physica Polonica A
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2015
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vol. 128
|
issue 2
179-181
EN
We present a theoretical description of the influence of incoherent acoustic phonons on the magnetic anisotropy of magnetic semiconductors. Our theory is based on the six-band Kane model of the electron energy spectrum describing the valence band with k· p Hamiltonian including the hole-phonon interaction term. We include the effect of incoherent phonons through the hole self-energy in the six-band model, and assume a strong laser-pulse-induced flux of non-equilibrium acoustic phonons. The results of numerical calculations of magnetic anisotropy performed for (GaMn)(AsP) magnetic alloy semiconductors demonstrate the essential role of incoherent phonons.
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