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Raman Studies of Defects in Graphene Grown on SiC

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Grodecki K., Bożek R., Borysiuk J., Strupinski W., Wysmolek A., Stępniewski R., Baranowski J.

Acta Physica Polonica A

2011

vol. 119

issue 5

595-596

The Raman scattering studies of multi-layer graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) substrates are presented. Intensity ratio of the D and G bands was used to estimate the average size of the graphene flakes constituting carbon structures. The obtained estimates were compared with flake sizes from atomic force microscopy data. We found that even the smallest structures observed by atomic force microscopy images are much bigger than the estimates obtained from the Raman scattering data. The obtained results are discussed in terms of different average flake sizes inside and on the surface of the multi-layer graphene structure, as well as different type of defects which would be present in the investigated structures apart from edge defects.

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1 Acta Physica Polonica A

1 2011

1 Baranowski J.

1 Borysiuk J.

1 Bożek R.

1 Grodecki K.

1 Strupinski W.

1 Stępniewski R.

1 Wysmolek A.

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Raman Studies of Defects in Graphene Grown on SiC