Search results

Sort By:

Limit search:

Quantum Model for Metal-Insulator Transition in Amorphous Gd_{x}Si_{1-x}

100%

Paja A., Ornat M.

Acta Physica Polonica A

2013

vol. 124

issue 4

717-719

The model for experimentally observed metal-insulator transition induced by magnetic field in amorphous Gd_{x}Si_{1 - x} is presented. The method of calculation is based on the previously created model for amorphous alloys now developed to include magnetic field effects. The model is based on the quantum "2 k_{F}" scattering model theory where the pseudopotentials are replaced by the scattering matrix operators and the Fermi energy is properly determined by the accurate values of the phase shifts. The results agree very well with experimental data.

The Effect of Hydrogenation on the Electrical Resistivity of Amorphous Alloys

100%

Ornat M., Paja A.

vol. 126

issue 6

1296-1298

Theoretical investigations of the influence of hydrogen contents on the electrical resistivity of amorphous metallic alloys have been carried out. We have made use of our method of calculations of the electrical resistivity of disordered systems based on the ground of Morgan-Howson-Saub and Evans models. Our method is fully quantum, includes multiple scattering effects and uses the scattering matrix operators for describing the electron-ion interactions. The model gives good agreement with experiment for many binary systems and should work for ternary systems as well, thus we performed calculations with hydrogen as one of the components of a ternary alloy. The results of our calculations show that the resistivity should increase with hydrogen concentration. Some experimental data confirm this predication.

Refine search results

2 Acta Physica Polonica A

1 2014

1 2013

2 Ornat M.

2 Paja A.

Search results

Quantum Model for Metal-Insulator Transition in Amorphous Gd_{x}Si_{1-x}

The Effect of Hydrogenation on the Electrical Resistivity of Amorphous Alloys