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Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

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Matsuo Y., Ijichi T., Yamada H., Hatori J., Ikehata S.

Open Physics

2004

vol. 2

issue 2

357-366

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE G=0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E c). From these results, it is suggested that the PEN-FET becomes a memory device.

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1 Open Physics

1 2004

1 Hatori J.

1 Ijichi T.

1 Ikehata S.

1 Matsuo Y.

1 Yamada H.

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Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene