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Synthesis of PbTiO₃ Thin Films by Annealing Multilayer Oxide Structures in Vacuum

100%

Iljinas A., Stankus V.

Acta Physica Polonica A

2016

vol. 129

issue 1

121-124

This article presents investigation of syntheses of perovskite PbTiO₃ thin films by using reactive magnetron layer-by-layer deposition on Si (100) substrate and post-annealing in air and vacuum (p=5×10^{-3} Pa). The film stoichiometry was accurately controlled by the deposition of individual layers with the required ( ≈1 nm) thickness, using the substrate periodic moving over targets. Deposited thin films were annealed in air and in vacuum at 670°C and 770°C for 1 h, respectively. The morphological, structural, and chemical properties of thin films deposited at 300°C substrate temperature and post-annealed thin films using either conventional annealing and thermal annealing in vacuum at different temperatures were investigated and compared between. X-ray diffraction measurements of thin films annealed in air show formed crystalline perovskite PbTiO₃ phase with tetragonality c/a=1.047. The crystallite size of oxidized films depends on the substrate temperature. The structure of post annealed in vacuum thin films strongly depends on Pb/Ti atomic ratio. It was observed that the best structure and morphology forms when atomic ratio of Pb/Ti was 0.80. Pseudocubic phase of lead titanate forms with sufficiently low tetragonality at 670°C temperature.

Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

81%

Iljinas A., Burinskas S., Dudonis J.

Acta Physica Polonica A

2011

vol. 120

issue 1

60-62

In this work Bi_2O_3 thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the Bi_2O_3 films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.

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2 Acta Physica Polonica A

1 2016

1 2011

2 Iljinas A.

1 Burinskas S.

1 Dudonis J.

1 Stankus V.

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Synthesis of PbTiO₃ Thin Films by Annealing Multilayer Oxide Structures in Vacuum

Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering