Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
enabled [disable] Abstract
Number of results

Results found: 4

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
EN
Exciton spin decay is studied in a self-assembled InAs/GaAs quantum dot. The spin relaxation results from an interplay of two factors: the Bir-Pikus Hamiltonian and the short-range exchange interaction, leading to one and two phonon assisted transitions. We establish a hierarchy between the resulting transition rates and show the dominating role of transverse phonons for all the transitions.
EN
We perform simulations of time-resolved optical experiments of carrier-capture processes in a quantum wire-dot system. Scattering of charge carriers with optical phonons of the quantum wire can result in transitions from the continuum states of the quantum wire to discrete states of the quantum dot. We treat the scattering of carriers with optical phonons within a Lindblad single-particle approach. By considering the coupling of carriers to a light field we are able to simulate pump-probe experiments which are shown to be capable of measuring the captured populations. We further discuss the influence of the Coulomb interaction on the obtained spectra.
3
Content available remote

Carrier Trapping in a Quantum Dash: Optical Signatures

100%
EN
We theoretically study the optical properties and the electronic structure of highly elongated quantum dots (quantum dashes) and show how geometrical fluctuations affect the excitonic spectrum of the system. The dependence of the absorption intensities on the geometrical properties (depth and length) of the trapping center in a quantum dash is analyzed and the dependence of the degree of the linear polarization on these geometrical parameters is studied.
EN
The effect of acoustic phonons on different light-induced excitations of a semiconductor quantum dot is investigated. Resonant excitation of the quantum dot leads to the Rabi oscillations, which are damped due to the phonon interaction. When the excitation frequency is detuned, an occupation can only occur due to phonon absorption or emission processes. For frequency-swept excitations a population inversion is achieved through adiabatic rapid passage, but the inversion is also damped by phonons. For all three scenarios the influence of the phonons depends non-monotonically on the pulse area.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.