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CVD Diamond Films Quality Characterization by ESR, SEM and Raman Spectroscopy

100%
Fabisiak K., Patyk J., Rozpłoch F.
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EN
Polycrystalline diamond films were deposited by electron assisted hot filament chemical vapor deposition method on (001) Si substrate using a mixture of propane-butane and hydrogen as working gas. In morphology investigation of diamond films using scanning electron microscope, it was found that diamond film morphology is changing from (111), for hydrocarbon concentration below 0.5 vol.%, via (100) to the so-called "ball-like" structure. The diamond film quality and defect structures in it were investigated by Raman and electron spin resonance spectroscopy for the purpose of obtaining basic knowledge which will aid the growth of defect free epitaxial diamond film for electronic and optical applications.
2
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Electrochemical Impedance Spectroscopy Studies of HF CVD Diamond Films

88%
Kowalska M., Fabisiak K., Wrzyszczyński A., Szybowicz M., Paprocki K.
Acta Physica Polonica A
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2015
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vol. 128
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issue 3
447-451
EN
Diamond films were synthesized by a hot filament vapor deposition method using H₂/CH₄ gas mixtures. A Hioki impedance analyzer was used to study the dielectric properties of the deposited diamond films. The dielectric dispersion measurement yielded the real and imaginary parts of impedance of diamond films in the form of a Nyquist plot in a complex plane. The obtained results were fitted by using equivalent circuit which consists of three impedance (Z) components containing resistor R and capacitor C or constant phase element connected in parallel. The structure and quality of diamond films were analyzed by scanning electron microscopy and the Raman spectroscopy. The impedance measurements showed that concentration of non-diamond admixture has essential influence on electrochemical properties of diamond layers.
3
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Structural and Electrical Characterization of Undoped Diamond Layer Grown by HF CVD

76%
Banaszak-Piechowska A., Paprocki K., Fabisiak K., Dudkowiak A., Szybowicz M., Staryga E.
Acta Physica Polonica A
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2017
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vol. 132
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issue 4
1411-1414
EN
The undoped diamond layers were prepared using hot filament chemical vapor deposition technique. The controlled variation of the deposition parameters resulted in the layers with varying amount of nondiamond impurities. Routine characterization of the layers was carried out using scanning electron microscopy, X-ray diffractometry, and the Raman spectroscopy. Detailed measurements of room temperature electrical conductivity (σ₃₀₀), current-voltage characteristics have yielded useful information about the electrical conduction mechanism in this interesting material. The σ₃₀₀ and I-V characteristic measurements were done in sandwiched configuration taking care off the surface effects. The diamond shows room temperature dc conductivity reaching the values in the range of σ₃₀₀ ≈0.1-1 μS/cm. The I-V characteristics in these layers show space charge limited conduction behavior with I ~ V² in high voltage region. The obtained results are explained in terms of chemically adsorbed hydrogen on the surface of diamond layers, which is a source of acceptor states just above the top of valence band.
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