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1
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Mercury Zinc Telluride 10.6 µm Ambient Temperature Photodetectors

100%
Piotrowski J.
Acta Physica Polonica A
|
1991
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vol. 80
|
issue 5
751-765
EN
Theoretical and experimental investigations of mercury zinc telluride (MZT) ambient temperature longwavelength photodetectors are reported. The ultimate detectivities of MZT photoconductors (PC), photodiodes, photoelectromagnetic (PEM) and Dember detectors at 10.6 μm have been calculated as a function of material composition, doping and geometry of the devices. The high-temperature longwavelength PC and PEM detectors have been fabricated from Cu-doped bulk MZT crystals grown by a modified quench/anneal technique. The measured performance has been confronted with theoretical predictions showing good overall agreement. It is concluded that the high figure of merit, stability and hardness of MZT make this material superior in comparison to mercury cadmium telluride and that it will replace the latter in application for high-temperature photodetectors. The performance of high-temperature MZT photodetectors can be further improved by the use of optical resonant cavity and optical immersion. These devices exhibit detectivity by several orders of magnitude higher than thermal detectors with subnanosecond response time, and can achieve performance comparable to that of slow thermal detectors.
2
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Infrared Detectors - New Trends

100%
Piotrowski J.
Acta Physica Polonica A
|
1995
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vol. 87
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issue 2
303-316
EN
Recent trends in infrared detectors are towards large, electronically ad­dressed two-dimensional arrays and higher operating temperature. This will lead both to higher performance and to smaller, lighter and more afford­able IR systems. Cooling requirements are the main obstacle to the more widespread use of infrared systems based on semiconductor photodetectors, particularly in the civil field. Fundamental limitations to performance of IR photodetectors are due to the statistical nature of generation-recombination processes and resulting noise. Ways to overcome the limitations are discussed including use of the optical immersion and optical resonant cavity. Finally, the progress in a mode of operation is presented, in which the thermal gen­eration of carriers is suppressed by the use of stationary depletion of narrow gap semiconductors. The practical near room temperature narrow gap semi­conductor photodetectors are reported. Competitive technologies based on Schottky barrier devices and low dimensional solids are considered briefly.
3
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Content available

Oilless and frictionless compressor with double-sided rotationally oscillating piston

51%
Chomczyk W., Piotrowski J., Ostapski W., Tataj T.
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2013
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issue 2
4
Publication available in full text mode
Content available

Modeling of HgCdTe LWIR detector for high operation temperature conditions

45%
Gawron W., Martyniuk P., Madejczyk P., Rogalski A., Piotrowski J.
Metrology and Measurement Systems
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2013
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issue 2
5
Content available remote

Extension of Usable Spectral Range of Peltier Cooled Photodetectors

45%
Piotrowski A., Piotrowski J., Gawron W., Pawluczyk J., Pedzinska M.
Acta Physica Polonica A
|
2009
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vol. 116
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issue S
S-52-S-55
EN
This paper provides update on development of the Peltier cooled detectors optimized for wavelengths above 13 μm. Initially, the devices made by Vigo were mostly used for uncooled detection of CO_{2} laser radiation. Over the years the performance and speed of response has been steadily improved. At present the uncooled or Peltier cooled photodetectors can be used for sensitive and fast response detection in the mid-wavelength and long-wavelength infrared spectral range. The devices have found important applications in IR spectrometry, quantum cascade laser based gas analyzers, laser radiation alerters and many other IR systems. Recent efforts were concentrated on the extension of useful spectral range to > 13 μm, as required for its application in Fourier transform IR spectrometers. This was achieved with improved design of the active elements, use of monolithic optical immersion technology, enhanced absorption of radiation, dedicated electronics, series connection of small cells in series, and last but not least, applying more efficient Peltier coolers. Practical devices are based on the complex HgCdTe heterostructures grown on GaAs substrates with metal-organic chemical vapor deposition technique with immersion lens formed by micromachining in the GaAs substrates. The results are very encouraging. The devices cooled with miniature 4 stage Peltier coolers mounted in TO-8 style housings show significant response at wavelength exceeding 16 μm.
6
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Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates

39%
Benyahia D., Kubiszyn Ł., Michalczewski K., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
322-324
EN
Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.
7
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Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

33%
Michalczewski K., Ivaldi F., Kubiszyn Ł., Benyahia D., Boguski J., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
325-328
EN
We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.
8
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Growth of MOCVD HgCdTe heterostructures for uncooled infrared photodetectors

33%
Piotrowski A., Madejczyk P., Gawron W., Kłos K., Pawluczyk J., Grudzień M., Piotrowski J., Rogalski A.
|
2005
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vol. 53
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issue 2
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