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On the Symmetry of the Sulfur Pair-Related Defect in Silicon

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Bennebroek M., Zakrzewski A., Frens A., Schmidt J.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
725-728
EN
A sulfur-related-pair defect in silicon has been studied with optically detected magnetic resonance spectroscopy. Measurement of the angular dependence of the optically detected magnetic resonance signals supplemented by the analysis of the spectrum "quality" yield to the conclusion that the point group symmetry of the defect studied is C_{1h}.
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