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1
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Temperature Dependence of the Switching Field in Nanocrystalline FeNiMoB Microwires

100%
Klein P., Varga R., Vazquez M.
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vol. 126
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issue 1
64-65
EN
We have studied temperature dependencies of the switching field in as-cast and nanocrystalline glass-coated Fe_{40}Ni_{38}Mo_{4}B_{18} microwires. The switching field shows complex temperature dependence in the as-cast state reflecting the complex stress distribution induced during annealing. The temperature dependence of the switching field depends strongly on the stage of nanocrystallization being negative for low temperatures of annealing and positive for annealing at 700 K.
2
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Magnetic Properties of Glass-Coated FeWB Microwires

100%
Klein P., Varga R., El Kammouni R., Vazquez M.
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vol. 126
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issue 1
70-71
EN
We have studied magnetization process in amorphous bistable Fe_{80}W_{3}B_{17 } microwires with reduced Curie temperature. High mechanical stresses from glass-coating, induced during production process, result in high switching field. Reducing the length of microwire, the switching field decreases as a result of reduction of magnetoelastic anisotropy. Moreover, the decrease of magnetoelastic anisotropy results in a complex temperature dependence of the switching field. On the other hand, strong variations of the switching field with temperature can be employed in miniaturised temperature sensor.
3
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Temperature Dependence of Magnetization Process in Bistable Amorphous and Nanocrystalline FeCoMoB Microwires

100%
Klein P., Varga R., Vazquez M.
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issue 5
809-810
EN
We have studied the effect of thermal treatment on the magnetic properties of amorphous and nanocrystalline Fe_{40}Co_{38}Mo_4B_{18} microwires. The magnetization process was measured within the temperature interval from 80 to 425 K. Microwires shows complex temperature dependence of the switching field in amorphous state due to the presence of complex stress distribution induced during production. After nanocrystallization, the switching field depends linearly on the measuring temperature that makes such microwires ideal for sensing applications.
4
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Influence of Thermal Treatment on Frequency Dependence of the Switching Field in Amorphous and Nanocrystalline FeNiMoB Microwires

100%
Komova E., Varga R., Vazquez M.
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issue 5
768-769
EN
Amorphous and nanocrystalline ferromagnetic glass-coated microwires show excellent magnetic properties that make them very suitable to be employed as sensing elements in devices for technical applications. New Fe_{40}Ni_{38}Mo_4B_{18} alloy composition can be appropriate to prepare soft magnetic nanocrystalline microwires which exhibit magnetic bistability even in the nanocrystalline state. Stability of magnetic properties after different thermal treatments (T_{a} = 250-425°C) and after nanocrystallization was confirmed by the switching field H_{sw} measurements. The frequency dependence of the switching field was investigated. Two contributions to the domain wall switching mechanism were recognized: magnetoelastic one coming from the magnetoelastic interaction of the magnetic moments with the stresses and relaxation one coming from the structural relaxation of local defects at atomic scale. But, the relative role of both contributions has been shown to vary strongly in different stage of devitrification.
5
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Single Domain Wall Propagation at Low Fields

100%
Kostyk J., Varga R., Vazquez M.
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vol. 126
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issue 1
30-31
EN
We have studied the domain wall propagation at low fields regime in thin glass-coated microwire of composition Fe_{77.5}Si_{7.5}B_{15}. It is shown, that power law describes domain wall dynamics at low fields. Such behaviour results from the interaction of the propagating domain wall with the defects present in the material. At high fields, the domain wall mobility becomes negative. This can be explained as a result of domain structure relaxation. The exponent q from power law, which determines the domain wall shape, has a value of 0.19 for both cases, without applied stress and with applied stress of 20 MPa. This means, that domain wall shape is flexible in both measurements.
6
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GMI Effect in Annealed Fe_{40}Ni_{38}Mo_{4}B_{18} Microwires

88%
Komova E., Šidik F., Klein P., Varga R., Vazquez M.
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vol. 126
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issue 1
74-75
EN
Amorphous glass-coated microwires are ideal material for miniaturized applications for sensing the temperature, stress and magnetic field. One of the key parameters for future applications is their time and thermal stability. It has been shown that stability can be improved by using nanocrystalline materials that combine good soft magnetic properties of amorphous matrix with high structural stability of crystalline grains. Such nanocrystalline materials are usually obtained by annealing of amorphous precursor. In the given contribution, the influence of dc current annealing on the domain structure and GMI effect in amorphous and nanocrystalline Fe_{40}Ni_{38}Mo_{4}B_{18} magnetic microwire has been studied. The annealing induces additional circular magnetic anisotropy, stress relief and structure homogenization. However, the increase of magnetostriction results in the decrease of GMI. Annealing at optimum crystallisation temperature results in an increase of the relative permeability due to the formation of the nanosized grains. Consequently, GMI amplitude is comparable to that of as-cast state.
7
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Magnetic Properties of CoFeSiB/CoNi, CoFeSiB/FeNi, FeSiB/CoNi, FeSiB/FeNi Biphase Microwires in the Temperature Range 295-1200 K

76%
Iglesias I., El Kammouni R., Chichay K., Perov N., Vazquez M., Rodionova V.
Acta Physica Polonica A
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2015
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vol. 127
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issue 2
591-593
EN
We have studied the magnetic properties of two series of magnetically biphase microwires with 1 μm thickness of CoNi-based hard or FeNi-based soft shells with a core of FeSiB or FeCoSiB glass-coated microwires. The magnetic properties were analyzed as a function of temperature in the range from 295 K to 1200 K using a vibrating sample magnetometer. Analysis of the magnetization reversal of each phase with measuring temperature has been performed.
8
Content available remote

Effect of Current Annealing on Domain Structure in Amorphous and Nanocrystalline FeCoMoB Microwires

76%
Klein P., Varga R., Onufer J., Ziman J., Badini-Confalonieri G., Vazquez M.
Acta Physica Polonica A
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2017
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vol. 131
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issue 4
681-683
EN
The influence of current annealing on the complex domain structure in amorphous and nanocrystalline FeCoMoB microwire has been studied. The thickness of radial domain structure together with the switching field of single domain wall change as a consequence of variation of complex internal stress distribution inside metallic core. Firstly, radial domain structure thickness monotonously increases with increasing annealing DC current density for amorphous state. Switching field exhibits local minimum in nanocrystalline sample annealed at 500 MA/m^2 for 10 min when the lowest thickness of outer shell (182 nm) was observed. Such annealed sample (which magnetic properties exhibit excellent temperature stability) is suitable candidate for miniaturized sensor construction for sensing the magnetic field or mechanical stress.
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