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The Superconducting Transition in Boron Doped Silicon Films

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Kociniewski T., Débarre D., Grockowiak A., Kačmarčík J., Marcenat C., Bustarret E., Ortega L., Klein T., Prudon G., Dubois C., Gautier B., Dupuy J.

issue 5

1026-1027

We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by gas immersion laser doping. This technique is proved to be a powerful technique to dope silicon in the alloying range 2-10 at.% where superconductivity occurs. The superconducting transitions are sharp and well defined both in resistivity and magnetic susceptibility. The variation of T_{c} on the boron concentration is in contradiction with a classical exponential dependence on superconducting parameters. Electrical measurements were performed in magnetic field on the sample with c_{B} = 8 at.% (400 laser shots) which has the highest T_{c} (0.6 K). No hysteresis was found for the transitions in magnetic field, which is characteristic of a type-II superconductor. The corresponding upper critical field was on the order of 1000 G at low temperatures, much smaller than the value previously reported. The temperature dependence of H_{c2} is very well reproduced by the linearized Gorkov equations neglecting spin effects in the very dirty limit. These measurements in magnetic field allow an estimation of the electronic mean-free path, the coherence length, and the London penetration depth within a simple two-band free electron model.

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1 Acta Physica Polonica A

1 2010

1 Bustarret E.

1 Dubois C.

1 Dupuy J.

1 Débarre D.

1 Gautier B.

1 Grockowiak A.

1 Kačmarčík J.

1 Klein T.

1 Kociniewski T.

1 Marcenat C.

1 Ortega L.

1 Prudon G.

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The Superconducting Transition in Boron Doped Silicon Films