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Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions

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Datsenko L., Żymierska D., Auleytner J., Klinger D., Machulin V., Klad'ko V., Melnik V., Prokopenko I., Czosnyka T., Choiński J.

Acta Physica Polonica A

1999

vol. 96

issue 1

137-142

The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10^{14} particles/cm^{2} is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α_{1}}, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.

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1 Acta Physica Polonica A

1 1999

1 Auleytner J.

1 Choiński J.

1 Czosnyka T.

1 Datsenko L.

1 Klad'ko V.

1 Klinger D.

1 Machulin V.

1 Melnik V.

1 Prokopenko I.

1 Żymierska D.

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Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions