Search results

Sort By:

Limit search:

Structure, Morphology, and Band Gap of Ti-V-O Mixed Oxides Processed by Coprecipitation and Calcination

100%

Park M., Lim Y., Sung Y., Kwak D., Lee J.

Acta Physica Polonica A

2016

vol. 129

issue 4

875-877

Mixed oxides of Ti-V-O were co-precipitated by wet process using TiCl₄ and VOCl₃ as starting materials. As-precipitated gels were calcinated at 800°C for 4 hours in oxygen atmosphere. Effects of vanadium content on the structural evolution, morphology, and band gap of Ti-V-O oxides were investigated. Calcination has produced mixtures of TiO₂/VO₂/V₂O₅ oxides and has allowed formation of Ti_{1-x}V_{x}O₂. Lattice parameters of rutile TiO₂ were precisely measured to investigate vanadium substitution into single rutile phase of Ti_{1-x}V_{x}O₂ with varying vanadium content. As vanadium addition was increased, particles were coarsening rapidly during calcination. Band gap of the Ti-V-O oxides was measured using ultraviolet visible light spectrometer. A decrease of band gap down to 1.7 eV with the addition of maximum of 10 at.% of vanadium was measured, which is due to the formation of single phase of Ti_{1-x}V_{x}O₂ as well as the formation of metallic VO₂ or V₂O₅ particles.

Parameters of an Unique Condenson State in the Structure of the rm In_4 Se_3 Crystal

100%

Sznajder M., Lim Y., Glukhov K., Kharkhalis L., Bercha D.

Acta Physica Polonica A

2012

vol. 122

issue 6

1115-1117

Based upon the ab initio band structure calculations results the dispersion law parameters of charge carriers of the orthorhombic In_4 Se_3 semiconductor as well as of its Sn- and Te-doped compounds were calculated. This allowed to estimate parameters of the electron condenson states in those compounds.

Refine search results

2 Acta Physica Polonica A

1 2016

1 2012

2 Lim Y.

1 Bercha D.

1 Glukhov K.

1 Kharkhalis L.

1 Kwak D.

1 Lee J.

1 Park M.

1 Sung Y.

1 Sznajder M.

Search results

Structure, Morphology, and Band Gap of Ti-V-O Mixed Oxides Processed by Coprecipitation and Calcination

Parameters of an Unique Condenson State in the Structure of the rm In_4 Se_3 Crystal