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1

Terahertz Generation and Detection by Plasma Waves in Nanometer Gate High Electron Mobility Transistors

100%

Knap W., Łusakowski J., Teppe F., Dyakonova N., Meziani Y.

Acta Physica Polonica A

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2005

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vol. 107

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issue 1

82-91

EN

The high electron mobility transistors can act as a resonator cavity for the plasma waves that can reach THz frequencies for a nanometer size devices. As was predicted by Dyakonov and Shur in 1993, the steady state of the current flow in a gated 2D electron gas can become unstable leading to the emission of an electromagnetic radiation at the plasma wave frequencies. The theory predicted also that the plasma waves can be used for resonant detection of THz electromagnetic radiation. In the present paper we review our recent experiments on THz emission and detection performed on high electron mobility transistors based on different semiconductor structures: InGaAs/GaAlAs, GaAs/GaAlAs, and Si.

2

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

73%

Videlier H., Dyakonova N., Teppe F., Consejo C., Chenaud B., Knap W., Lusakowski J., Tomaszewski D., Marczewski J., Grabiec P.

Acta Physica Polonica A

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2011

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vol. 120

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issue 5

927-929

EN

We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.

3

THz Double-Grating Gate Transistor Detectors in High Magnetic Fields

73%

But D., Dyakonova N., Coquillat D., Teppe F., Knap W., Watanabe T., Tanimoto Y., Boubanga Tombet S., Otsuji T.

Acta Physica Polonica A

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2012

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vol. 122

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issue 6

1080-1082

EN

Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.

4

THz Emission Related to Hot Plasmons and Plasma Wave Instability in Field Effect Transistors

59%

Dyakonova N., El Fatimy A., Meziani Y., Coquillat D., Knap W., Teppe F., Buzatu P., Diforte-Poisson M., Dua C., Piotrowicz S., Morvan E., Delage S.

Acta Physica Polonica A

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2011

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vol. 120

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issue 5

924-926

EN

The current flowing in two-dimensional channel of field effect transistors can generate different types of charge density perturbations. They can have a form of uncorrelated hot plasmons or plasma waves. The mechanism of plasma wave generation depends on the parameter ωt and on boundary conditions of the channel. At ωt ≪ 1 only hot plasmons can be generated. The THz emission due to radiative decay of hot plasmons has a broad spectrum and can be only poorly controlled by the transistor gate. The tunability of THz emission can be obtained in the case of the Dyakonov-Shur plasma wave instability. In this work we present experimental studies of THz emission in InGaP/InGaAs/GaAs and GaN/AlGaN based field effect transistors. We report on two types of emission onset: (i) a smooth one typical for hot plasmons generation and (ii) threshold-like one characteristic for plasma waves instabilities. The tunability and spectra of emission change depending on the transistor configuration. We discuss the results suggesting several possible mechanisms of plasma wave excitation.

5

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors

59%

Teppe F., Consejo C., Torres J., Chenaud B., Solignac P., Fathololoumi S., Wasilewski Z., Zholudev M., Dyakonova N., Coquillat D., El Fatimy A., Buzatu P., Chaubet C., Knap W.

Acta Physica Polonica A

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2011

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vol. 120

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issue 5

930-932

EN

We report on the resonant detection of a 3.1 THz radiation produced by a quantum cascade laser using a 250 nm gate length GaAs/AlGaAs field effect transistor at liquid nitrogen temperature. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel. The detection is enhanced by increasing the drain current and driving the transistor into saturation regime. These results clearly show that plasma wave nanometer-size transistors can be used as detectors in all-solid-state terahertz systems where quantum cascade lasers act as sources.

Refine search results

Terahertz Generation and Detection by Plasma Waves in Nanometer Gate High Electron Mobility Transistors

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

THz Double-Grating Gate Transistor Detectors in High Magnetic Fields

THz Emission Related to Hot Plasmons and Plasma Wave Instability in Field Effect Transistors

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors