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Temperature Dependence of Properties of Heterojunctions of Some TCNQ Salts in Polymer Matrices with p- or n-Doped Silicon

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Jeszka J. K., Tracz A., Boiteux G., Seytre G., Kryszewski M.
Acta Physica Polonica A
|
1995
|
vol. 88
|
issue 3
533-541
EN
The temperature dependence of the electrical properties of heterojunctions with silicon formed by conductive organic polymer composites with networks of two complex tetracyanoquinodimethane salts (of N-n-butyl-isoquinolinium and of diethyl methyl sulphonium cations) were studied. We show that it is possible to prepare junctions with quite good rectifying properties, comparable to those obtained using other organic semiconductors. The observed forward-bias current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. Reverse bias and C-V characteristics show that the transport mechanism, especially in the case of p-Si junctions is more complicated and probably tunnelling between localized levels plays an important role.
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