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Influence of Coimplantation on Activation of Er Emission in Si

100%

Przybylińska H., Hendorfer G., Jantsch W., Palmetshofer L.

Acta Physica Polonica A

1995

vol. 87

issue 2

365-368

The results of high resolution photoluminescence studies of erbium implanted silicon are presented. We show that the apparent enhancement of Er emission by coimplantation with light elements is not due to formation of Er-dopant complexes, but rather to Er forming complexes with defects induced by the implantation process alone.

Optically Active Centers in Er-Implanted Silicon

76%

Przybylińska H., Jantsch W., Hendorfer G., Palmetshofer L., Wilson R. J., Sealy B. J.

Acta Physica Polonica A

1995

vol. 88

issue 5

877-880

We show that of all the optically active Er centers in silicon found after ion implantation and optimum annealing (900°C) the isolated cubic interstitial Er is the dominant PL center above 100 K. At lower anneal temperatures ( ≈ 600°C) with later rapid thermal anneal at 900°C oxygen related centers also emit.

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2 Acta Physica Polonica A

2 1995

2 Hendorfer G.

2 Jantsch W.

2 Palmetshofer L.

2 Przybylińska H.

1 Sealy B. J.

1 Wilson R. J.

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Influence of Coimplantation on Activation of Er Emission in Si

Optically Active Centers in Er-Implanted Silicon