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Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures

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Kosiel K., Król K., Taube A., Guziewicz M., Gołaszewska-Malec K., Kruszka R., Kamińska E., Piotrowska A.
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2016
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issue 3
2
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Materials Technology for GaSb-Based optoelectronic Devices

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Piotrowska A., Kamińska E., Piotrowski T., Piskorski M., Guziewicz M., Papis E., Gołaszewska-Malec K., Kasjuniuk S.
Acta Physica Polonica A
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1996
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vol. 90
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issue 5
903-906
EN
A study is made of surface preparation, metallization, patterning and dielectric deposition with the aim of developing process technology for GaSb-based photonic devices.
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