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Electrical Control of Spin Relaxation Time in Complex Quantum Nanostructures

100%
Kurpas M., Kędzierska B., Janus-Zygmunt I., Maśka M., Zipper E.
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vol. 126
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issue 4a
A-20-A-25
EN
Spin related phenomena in quantum nanostructures have attracted recently much interest due to fast growing field of spintronics. In particular complex nanostructures are important as they provide a versatile system to manipulate spin and the electronic states. Such systems can be used as spin memory devices or scalable quantum bits. We investigate the spin relaxation for an electron in a complex structure composed of a quantum dot surrounded by a quantum ring. We shown that modifications of the confinement potential result in the substantial increase of the spin relaxation time.
2
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Application of the Dot-Ring Nanostructure to Control Electrical Transport in the Coulomb Blockade Regime

86%
Janus-Zygmunt I., Kędzierska B., Gorczyca-Goraj A., Kurpas M., Maśka M., Zipper E.
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vol. 126
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issue 5
1171-1173
EN
Transport properties of a two-dimensional nanostructure composed of a quantum dot surrounded by a quantum ring (dot-ring nanostructure), are discussed. This complex system is a highly controllable object. Conduction through dot-ring nanostructure depends crucially on the coupling strength of its states to the electrodes, which is related to the spatial distribution of the electron's wave functions in dot-ring nanostructure. This distribution can be strongly modified, e.g., by the electrical gating so that the ground and excited states move between the inner dot and the outer ring. In this paper we show that this property can be used to control single-electron DC current through dot-ring nanostructure in the Coulomb blockade regime so that it can be used as a single electron transistor.
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