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1
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Photoionization of Ge¯-DX State in GaAs

100%
Piotrzkowski R., Dmowski L. H.
Acta Physica Polonica A
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1997
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vol. 92
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issue 5
950-952
EN
We have determined the efficiency of photoionization of Ge¯-DX state in GaAs as a function of photon energy. The optical ionization energy derived from the fitting is about 1.0 eV. It proves a large difference between optical and thermal ionization energies and confirms that for Ge-impurity, the broken-bond model and large lattice relaxation are valid and not the breathing mode with small lattice relaxation, resulting from the calculations presented for Ge-impurity in T.M. Schmidt, A. Fazzio, M.J. Caldas, Mater. Sci. Forum 196/201, 273 (1995).
2
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Evidence for Alloy Splitting of Ge Related DX State in Al_{x}Ga_{1-x}As

81%
Skierbiszewski C., Piotrzkowski R., Lubke K.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
531-533
EN
Thermal emission from resonant DX levels in Ge-doped GaAlAs was studied by measuring the temperature transients of free electron concentration. Pressure was used to fill the levels with electrons. Two emission peaks are observed in AlGaAs:Ge. This enables us to confirm that Ge, similarly to Si dopant, is stabilized upon dangling bond C_{3v} configuration in AlGaAs. Analysis of experimental data allows us to determine parameters of two components of the DX multilevel system. Evaluated alloy splitting of ground and top of the barrier states: 45 meV is comparable with determined for Si donor.
3
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Electrical Properties of InGaP Doped with Si

81%
Litwin-Staszewska E., Trzeciakowski W., Piotrzkowski R., Gonzalez L.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
431-435
EN
We measured Hall concentration n in InGaP:Si epitaxial layers grown by MBE as a function of pressure P up to 2 GPa and of temperature T from 77 to 300 K. We interpreted our results in terms of the broad distribution of impurity states resonant with the conduction band. From the low-temperature n(P) dependence we can directly obtain the total density of impurity states around the Fermi level ρ(E_{F}). The Fermi level can be shifted with respect to impurity states by applying pressure and by using samples with different n. In this way we obtain ρ(E) in a wide energy range. We discuss the possible reasons for the observed broad distribution of ρ(E).
4
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Interplay between Internal and External Electric Field Studied by Photoluminescence in InGaN/GaN Light Emitting Diodes

61%
Staszczak G., Khachapuridze A., Grzanka S., Czernecki R., Piotrzkowski R., Perlin P., Suski T.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
891-893
EN
We have studied a series of polar InGaN/GaN light emitting diodes, consisting of either a blue (440-450 nm) quantum well, or combination of blue and violet (410 nm) quantum wells (with indium content 18% and 10%, respectively). The blue quantum well was always placed close to p-type region of the particular LED. We found that the electroluminescence induced by low current is characterized by light emission from the blue quantum well only. In comparison, optical excitation of our LEDs leads to light emission with energies characteristic either for blue and/or violet quantum wells. The corresponding microphotoluminescence spectra evolve depending on external polarization and variable light intensity of excitation supplied by He-Cd laser. Interplay between built-in electric field and externally applied polarization/screening decides about the band structure profiles and thus radiative recombination mechanisms.
5
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High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

42%
Sadovyi B., Amilusik M., Staszczak G., Bockowski M., Grzegory I., Porowski S., Konczewicz L., Tsybulskyi V., Panasyuk M., Rudyk V., Karbovnyk I., Kapustianyk V., Litwin-Staszewska E., Piotrzkowski R.
Acta Physica Polonica A
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2016
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vol. 129
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issue 1a
A-126-A-128
EN
Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.
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