We present a theoretical analysis of the phonon-assisted relaxation in a system composed of two self-assembled vertically stacked quantum dots. We construct realistic model, which takes into account the geometry and strain distribution in the system. We calculate phonon-assisted relaxation rates between the two lowest states (in one- and two-electron cases). The relaxation rates and energy levels are studied as a function of external (axial) electric field and geometry of the structure (dot sizes). We show that the relaxation times can be as low as 1 ps but efficient relaxation occurs only for very finely tuned dots.
In this contribution we study the accuracy of various forms of electron effective mass equation in reproducing spectral and spin-related features of quantum dot systems. We compare the results of the standard 8 band k·p model to those obtained from effective mass equations obtained by perturbative elimination procedures in various approximtions for a cylindrical quantum dot or a system of two such dots. We calculate the splitting of electronic shells, the electron g-factor and spin-orbit induced spin mixing and show that for a cylindrical dot the g-factor is reproduced very exactly, while for the two other quantities the effective mass equation is much less accurate.
The effect of acoustic phonons on different light-induced excitations of a semiconductor quantum dot is investigated. Resonant excitation of the quantum dot leads to the Rabi oscillations, which are damped due to the phonon interaction. When the excitation frequency is detuned, an occupation can only occur due to phonon absorption or emission processes. For frequency-swept excitations a population inversion is achieved through adiabatic rapid passage, but the inversion is also damped by phonons. For all three scenarios the influence of the phonons depends non-monotonically on the pulse area.
Hereby we present comprehensive experimental and theoretical study on fundamental optical properties and electronic structure of GaAs-based quantum dots grown using metalorganic chemical vapor deposition technique. The substantial redshift of emission, to the second telecommunication window of 1.3 μm, in comparison to standard InGaAs/GaAs quantum dots is obtained via strain engineering utilizing additional capping layer of In_{0.2}Ga_{0.8}As in this context referred to as strain reducing layer. It ensures lowering of the energy of the ground state transition to more application relevant spectral range. Optical properties of the quantum dot structure has been experimentally characterized by means of photoreflectance spectroscopy and power-dependent photoluminescence revealing 3 transitions originating from hybrid states confined in an asymmetric double quantum well formed of the wetting layer and strain reducing layer, as well as higher states of the quantum dots themselves with the first excited state transition separated by 67 meV from the ground state transition. Origin of the observed transitions was confirmed in theoretical modelling using 1-band single-particle approach for the quantum well part, and excitonic quantum dot spectrum obtained within 8 band k·p formalism followed by configuration interaction calculations, respectively. Additionally, photoluminescence excitation spectroscopy measurements allowed to identify a spectral range for efficient quasi-resonant excitation of the investigated quantum dots into the 2D density of states to be in the range of 835-905 nm.
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