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Enhancement of Electron Mobility and Photoconductivity in Quantum Well In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As/In_{0.52}Al_{0.48}As οn InP Substrate

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Kulbachinskii V., Lunin R., Yuzeeva N., Galiev G., Vasilievskii I., Klimov E.

Acta Physica Polonica A

2013

vol. 123

issue 2

345-348

Isomorphic In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As/In_{0.52}Al_{0.48}As quantum well structure on InP substrate were grown by molecular beam epitaxy. We investigated the electron transport properties and mobility enhancement in the structures by changing of doping level, the width d of quantum well In_{0.53}Ga_{0.47}As or by illumination using light with λ = 668 nm. Persistent photoconductivity was observed in all samples due to spatial separation of carriers. We used the Shubnikov-de Haas effect to analyze subband electron concentration and mobility. The maximal mobility was observed for quantum well width d = 16 nm.

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1 Acta Physica Polonica A

1 2013

1 Galiev G.

1 Klimov E.

1 Kulbachinskii V.

1 Lunin R.

1 Vasilievskii I.

1 Yuzeeva N.

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Enhancement of Electron Mobility and Photoconductivity in Quantum Well In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As/In_{0.52}Al_{0.48}As οn InP Substrate