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Deep-Level Defects in MBE-Grown GaN-Based Laser Structure

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Tsarova T., Wosiński T., Mąkosa A., Skierbiszewski C., Grzegory I., Perlin P.

Acta Physica Polonica A

2007

vol. 112

issue 2

331-337

We present results of deep-level transient spectroscopy investigations of defects in a GaN-based heterostructure of a blue-violet laser diode, grown by plasma-assisted molecular beam epitaxy on a bulk GaN substrate. Three majority-carrier traps, T1 at E_C - 0.28 eV, T2 at E_C - 0.60 eV, and T3 at E_V + 0.33 eV, were revealed in deep-level transient spectra measured under reverse-bias conditions. On the other hand, deep-level transient spectroscopy measurements performed under injection conditions, revealed one minority-carrier trap, T4, with the activation energy of 0.20 eV. The three majority-carrier traps were revealed in the spectra measured under different reverse-bias conditions, suggesting that they are present in various parts of the laser-diode heterostructure. In addition, these traps represent different charge-carrier capture behaviours. The T1 trap, which exhibits logarithmic capture kinetics, is tentatively attributed to electron states of dislocations in the n-type wave-guiding layer of the structure. In contrast, the T2, T3, and T4 traps display exponential capture kinetics and are assigned to point defects.

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1 Acta Physica Polonica A

1 2007

1 Grzegory I.

1 Mąkosa A.

1 Perlin P.

1 Skierbiszewski C.

1 Tsarova T.

1 Wosiński T.

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Deep-Level Defects in MBE-Grown GaN-Based Laser Structure