Search results

Sort By:

Limit search:

Lattice Deformation Studies in Silicon Implanted with High-Energy Protons

100%

Wieteska K., Dłużewska K., Wierzchowski W.

Acta Physica Polonica A

1996

vol. 89

issue 3

395-400

The deformation of crystal lattice in silicon implanted with protons of energy 1.6-9 MeV was studied by means of X-ray topography and double-crystal rocking curve measurements. The samples were investigated as-implanted and after thermal and electron annealing. The surface relief of the implanted part of the crystal was also revealed with optical methods. As-implanted wafers exhibited spherical bending being convex at the implanted side. Thermal and electron annealing caused a dramatic increase in bending of the implanted part while the bending of the remaining part of the sample was reduced. A characteristic behaviour of a double-crystal topographic contrast in the annealed crystals was explained due to bending of the shot-through layer along the Gaussian profile.

Interference Fringes in Synchrotron Section Topography of Implanted Silicon with a Very Large Ion Range

100%

Wieteska K., Wierzchowski W., Graeff W., Dłużewska K.

Acta Physica Polonica A

1997

vol. 91

issue 5

1021-1024

Silicon crystals implanted with 9 MeV protons to the dose of 5×10^{17} cm^{-2} were studied with X-ray topographic methods using both conventional and synchrotron radiation sources. After the implantation the crystals were thermally and electron annealed. The implantation produced large 600 μm thick shot-through layer while the total thickness of the samples was 1.6 mm. It was confirmed by means of double crystal topography that the whole crystal was elastically bent. The transmission section patterns revealed both parts of the implanted crystal separated by strong contrasts coming from the most damaged layer and distinct interference fringes which appeared on one side of the topograph only. The location of the fringes changed when the beam entered the other side of the sample. The mechanism of fringe formation was studied with numerical integration of the Takagi-Taupin equations, especially studying the intensity distribution in the diffraction plane. The simulations reproduced the location of the fringes in different geometries and indicate that they can be caused both by variable crystal curvature and variable ion dose.

Refine search results

2 Acta Physica Polonica A

1 1997

1 1996

2 Dłużewska K.

2 Wierzchowski W.

2 Wieteska K.

1 Graeff W.

Search results

Lattice Deformation Studies in Silicon Implanted with High-Energy Protons

Interference Fringes in Synchrotron Section Topography of Implanted Silicon with a Very Large Ion Range