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1
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On Subband Mobilities Observed in δ-doped AlGaAs/GaAs Quantum Wells and GaAs Layers

100%
Dobaczewski L., Maude D., Missous M., Portal J.
Acta Physica Polonica A
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1995
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vol. 87
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issue 1
201-204
EN
Electronic transport phenomena in molecular beam epitaxy grown sil­icon δ-doped AlGaAs/GaAs quantum wells and GaAs layers were investi­gated. Observations of the Shubnikov-de Haas oscillations allowed to deduce the redistribution of electrons among energy subbands formed by V-shaped and rectangular wells for GaAs layers and the AlGaAs/GaAs quantum wells, respectively. In both cases the effects of illumination upon individual sub-band mobilities and carrier concentrations were studied and the manifesta­tion of the DX centres was demonstrated.
2
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Coherent and Sequential Tunneling in High Magnetic Field

100%
Belyaev A. E., Vitusevich S. A., Maude D., Portal J. C.
Acta Physica Polonica A
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1997
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vol. 92
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issue 4
704-708
EN
In the resonant tunneling diode incorporating a wide one-sided spacer layer, an oscillation picture has been studied in both polarities of the applied voltage in high magnetic field. The results lead to the conclusion that the interference between the electron waves running in the forward direction and the ones reflected at some potential step can occur in both the emitter and collector regions. The characteristic lengths corresponding to the path of the ballistic motion of electrons were estimated. An exchange enhancement of the electronic g-factor in two-dimensional systems was observed.
3
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Combined Exciton-Cyclotron Resonance in Photoluminescence of a Two-Dimensional Hole Gas

76%
Jadczak J., Bryja L., Płochocka P., Wójs A., Misiewicz J., Maude D., Potemski M.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
852-853
EN
A two-dimensional hole gas in an asymmetric GaAs/Ga_{1-x}Al_{x}As quantum well is studied by polarization-resolved photoluminescence in high magnetic fields (up to B = 20 T) and at low temperatures (down to T = 50 mK). In addition to the previously reported dominant emission channels of various free and acceptor-bound trions, the high-energy hole cyclotron replicas of the bound states are now also observed, corresponding to the combined exciton-cyclotron resonance. Identification of different transitions in the rich, multi-peak spectra was possible by the analysis of optical selection rules and comparison of the experimental spectra with realistic numerical calculations.
4
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Spectroscopy of a Single Si Donor by the Resonant Tunnelling Experiment

76%
Baj M., Gryglas M., Jouault B., Maude D., Faini G., Gennser U., Cavanna A.
Acta Physica Polonica A
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2006
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vol. 110
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issue 2
157-162
EN
Resonant tunnelling via single impurities placed in a single barrier was experimentally studied. The typically observed structures in the current-voltage characteristics seem to be paired. Such a pair can be interpreted as ground and excited states of an impurity, related to X_{xy} and X_z valleys, which is in agreement with the results obtained for big mesas. However, it is not clear why X_{xy} states can be seen without any phonon participation.
5
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Electron-Electron Interaction Effects in Quantum Hall Regime of GaN/AlGaN Heterostructures

76%
Siekacz M., Dybko K., Maude D., Potemski M., Knap W., Skierbiszewski C.
Acta Physica Polonica A
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2007
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vol. 112
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issue 2
269-273
EN
We measured the activation of resistivity at quantum Hall minima in high mobility two-dimensional electron gas confined at AlGaN/GaN interface. The effective g-factor and effective mass was deduced. The electron-electron interactions modify both quantities compared to their bare band values. It is found that the influence of interactions is much more pronounced onto g-factor than effective mass. The relative spin susceptibility was also calculated and compared with available theories. The best agreement was found with the ideal two-dimensional gas model in random phase approximation.
6
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Spin-Orbit Coupling in n-Type PbTe/PbEuTe Quantum Wells

76%
Peres M., Chitta V., Maude D., Oliveira N., Rappl P., Ueta A., Abramof E.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
602-605
EN
Magnetoresistance measurements were performed on an n-type PbTe/PbEuTe quantum well and weak antilocalization effects were observed. This indicates the presence of spin-orbit coupling phenomena and we showed that the Rashba effect is the main mechanism responsible for this spin-orbit coupling. Using the model developed by Iordanskii et al., we fitted the experimental curves and obtained the inelastic and spin-orbit scattering times. Thus we could compare the zero field energy spin-splitting predicted by the Rashba theory with the energy spin-splitting obtained from the analysis of the experimental curves. The final result confirms the theoretical prediction of strong Rashba effect on IV-VI based quantum wells.
7
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Magnetic Properties of GaMnAs Single Layers and GaInMnAs Superlattices Investigated at Low Temperature and High Magnetic Field

76%
Hernandez C., Terki F., Charar S., Sadowski J., Maude D., Stanciu V., Svedlindh P.
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EN
Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the Curie temperature (T_c≈40 K), a new phase transition is observed close to 13 K.
8
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Breakdown of the Quantum Hall Effect

64%
Maude D., Rigal L., Desrat W., Potemski M., Portal J., Eaves L., Wasilewski Z., Toropov A., Hill G.
Acta Physica Polonica A
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2001
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vol. 100
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issue 2
213-226
EN
The breakdown of the dissipationless conductance in the integer and fractional quantum Hall effect regime is reviewed. The temperature dependence of the critical current and of the critical magnetic field at breakdown bears a striking resemblance to the phase diagram of the phenomenological two-fluid Gorter-Casimir model for superconductivity. In addition, a remarkably simple scaling law exists between different filling factors.
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