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High Resistivity AlGaAs Grown by Low Temperature MBE

100%

Radomska D., Ratajczak J., Regiński K., Bugajski M.

Acta Physica Polonica A

1998

vol. 94

issue 3

492-496

Al_{0.3}Ga_{0.7}As layers were grown by molecular beam epitaxy using substrate temperature 200-300°C, tetrameric As and two values of As/Ga+Al flux ratio i.e. 3 or 8. The post-growth annealing was performed in situ at 600°C for 20 min under As-overpressure. The samples were characterised by reflection high-energy electron diffraction, transmission electron microscope and room-temperature I-V measurements of n^{+}/LT grown layer /n^{+} resistors. The resistivity and trap-filled limited voltage have been determined. The best layers exhibited ρ of the order of 10^{9} Ω cm, were monocrystalline, uniformly precipitated and without dislocations.

Quasi-Molecule Model of the Spectra of Molecules in Polar Solution in Case of Time Dependent Fluorescence Shifts

88%

Bączyński A., Marszałek T., Radomska D., Targowski P., Ziętek B.

Acta Physica Polonica A

1992

vol. 82

issue 3

413-420

Analytical expressions of profiles of absorption and instantaneous fluorescence spectra of dye molecules in polar solvents are given. It is shown what parameters can be gained from electronic spectra of dye solutions. The new procedure of interpretation of transient fluorescence spectra is demonstrated in the case of the spectra of nile blue in alcohol.

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2 Acta Physica Polonica A

1 1998

1 1992

2 Radomska D.

1 Bugajski M.

1 Bączyński A.

1 Marszałek T.

1 Ratajczak J.

1 Regiński K.

1 Targowski P.

1 Ziętek B.

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High Resistivity AlGaAs Grown by Low Temperature MBE

Quasi-Molecule Model of the Spectra of Molecules in Polar Solution in Case of Time Dependent Fluorescence Shifts