Search results

1

Edge termination design for 1.7 kV silicon carbide p-i-n diodes

100%

Taube A., Sochacki M., Taube A., Sochacki M.

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2

Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors

55%

Kaczmarski J., Taube A., Dynowska E., Dyczewski J., Ekielski M., Kamińska E., Piotrowska A.

Acta Physica Polonica A

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2013

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vol. 124

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issue 5

855-857

EN

In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of 12 cm^2/(Vs) has been demonstrated.

3

High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

55%

Taube A., Kruszka R., Borysiewicz M., Gierałtowska S., Kamińska E., Piotrowska A.

Acta Physica Polonica A

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2011

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vol. 120

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issue 6A

A-22-A-24

EN

The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with SiO_2 and HfO_2/SiO_2 gate stacks. From the Terman method low density of interface traps (D_{it} ≈ 10^{11} eV^{-1} cm^{-2}) at SiO_2/GaN interface was calculated for as-deposited samples. Samples with HfO_2/SiO_2 gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of SiO_2/GaN interface shows applicability of SiO_2 as a gate dielectric in GaN MOSFET transistors.

4

Electronic Properties of Thin HfO_2 Films Fabricated by Atomic Layer Deposition on 4H-SiC

46%

Taube A., Gierałtowska S., Gutt T., Małachowski T., Pasternak I., Wojciechowski T., Rzodkiewicz W., Sawicki M., Piotrowska A.

Acta Physica Polonica A

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2011

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vol. 119

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issue 5

696-698

EN

Applicability of thin HfO_2 films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10^{12} eV^{-1} cm^{-2}) on HfO_2/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.

5

Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures

46%

Kosiel K., Król K., Taube A., Guziewicz M., Gołaszewska-Malec K., Kruszka R., Kamińska E., Piotrowska A.

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2016

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issue 3

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5 Taube A.

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3 Kamińska E.

2 Gierałtowska S.

2 Kruszka R.

1 Borysiewicz M.

1 Dyczewski J.

1 Dynowska E.

1 Ekielski M.

1 Gołaszewska-Malec K.

1 Gutt T.

1 Guziewicz M.

1 Kaczmarski J.

1 Kosiel K.

1 Król K.

1 Małachowski T.

1 Pasternak I.

1 Rzodkiewicz W.

1 Sawicki M.

1 Sochacki M.

1 Wojciechowski T.

Edge termination design for 1.7 kV silicon carbide p-i-n diodes

Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors

High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

Electronic Properties of Thin HfO_2 Films Fabricated by Atomic Layer Deposition on 4H-SiC

Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures