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1

Photoluminescence Properties of Porous Silicon Prepared by Electrochemical Etching of Si Epitaxial Layer

100%

Nossarzewska-Orłowska E., Brzozowski A.

Acta Physica Polonica A

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1993

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vol. 84

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issue 4

713-716

EN

The photoluminescence properties of porous layers prepared by anodization of p/p^{+} silicon epitaxial wafers are presented. The shift of the photoluminescence spectrum towards shorter wavelength due to the porosity increase and the experimental dependence of the photoluminescence maximum position on HF concentration during anodization are shown. Degradation of the photoluminescence intensity dependence on the storage time is described.

2

Investigation of Lattice Strains in Layered Structures Containing Porous Silicon

71%

Wierzchowski W., Wieteska K., Graeff W., Brzozowski A., Nossarzewska-Orłowska E.

Acta Physica Polonica A

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2002

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vol. 102

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issue 2

283-288

EN

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterisation included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidising and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of the investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton.

3

Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon

61%

Bala W., Głowacki G., Łukasiak Z., Drozdowski M., Kozielski M., Nossarzewska-Orłowska E., Brzozowski A.

Acta Physica Polonica A

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1995

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vol. 87

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issue 2

445-448

EN

Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p^{+} silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions.

4

Visible Luminescence from Porous Silicon

61%

Bała W., Firszt F., Nossarzewska-Orłowska E., Brzozowski A., Orłowski B., Kowalski B., Guziewicz E.

Acta Physica Polonica A

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1993

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vol. 84

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issue 4

761-764

EN

This paper presents results of investigation of the temperature dependence of visible luminescence in porous silicon layers prepared by anodization in hydrofluoric acid. Luminescence spectra were measured in the temperature range between 40 K and 350 K. Room temperature reflectivity spectra were also measured in vacuum ultraviolet radiation range from 4 eV to 12 eV.

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4 Acta Physica Polonica A

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1 Drozdowski M.

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1 Wierzchowski W.

1 Wieteska K.

1 Łukasiak Z.

Photoluminescence Properties of Porous Silicon Prepared by Electrochemical Etching of Si Epitaxial Layer

Investigation of Lattice Strains in Layered Structures Containing Porous Silicon

Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon

Visible Luminescence from Porous Silicon