Search results

1

Interlayer Exchange Coupling in Semiconductor EuS-PbS Ferromagnetic Wedge Multilayers

100%

Kowalczyk L., Wrotek S., Dziawa P., Osinniy V., Szot M., Story T., Sipatov A., Volobuev V., Fedorov A.

Acta Physica Polonica A

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2006

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vol. 110

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issue 2

225-231

EN

Antiferromagnetic interlayer coupling between ferromagnetic layers of EuS via nonmagnetic PbS spacer layer was experimentally studied in EuS-PbS wedge multilayers grown on KCl (001) substrates with EuS thickness of 6 nm and PbS thickness varying in the wedges in the range 0.3-6 nm (i.e. n=1-20 monolayers). Measurements of magnetic hysteresis loops of EuS-PbS multilayers performed in the temperature range 5-30 K by superconducting (SQUID) and magneto-optical magnetometers revealed a rapid increase in saturation magnetic field in multilayers with PbS spacer thinner than about 1.5 nm. It shows a monotonic increase in interlayer coupling strength with a decreasing PbS spacer thickness, in qualitative agreement with 1/2^n dependence predicted theoretically for semiconductor magnetic superlattices.

2

Magnetic Properties of EuS/Co Multilayers on KCl and BaF₂ Substrates

100%

Szot M., Kowalczyk L., Story T., Domukhovski V., Knoff W., Gas K., Volobuev V., Sipatov A., Fedorov A.

Acta Physica Polonica A

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2008

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vol. 114

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issue 5

1397-1402

EN

Magnetic and structural properties of EuS/Co multilayers were studied by magnetic optical Kerr effect and SQUID magnetometry techniques and by X-ray diffraction method. The multilayers containing monocrystalline, ferromagnetic EuS layer (thickness 35-55 Å) and metallic Co layer (thickness 40-250 Å), were grown on KCl (001) and BaF₂ (111) substrates using high vacuum deposition technique employing electron guns for Co and EuS. All investigated EuS/Co multilayers exhibit ferromagnetic properties at room temperature due to Co layer with the ferromagnetic transition in EuS layer clearly marked upon cooling below 16 K. In EuS/Co/EuS trilayers grown on KCl substrate the antiferromagnetic alignment of magnetization vectors of Co and EuS layers was experimentally observed as a characteristic low field plateau on magnetization hysteresis loops and a decrease in multilayer magnetization below 16 K. In Co/EuS bilayers the characteristic temperature dependent shift of magnetization loops was found due to exchange bias effect attributed to the CoO/Co interface formed by the oxidation of the top Co layer.

3

A Photoluminescence Study in PbS-EuS Superlattices

100%

Kowalczyk L., Sadowski J., Gałązka R., Stachow-Wójcik A., Sipatov A., Volobuev V., Smirnov V., Dugaev V.

Acta Physica Polonica A

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1998

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vol. 94

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issue 3

397-400

EN

Investigations of the photoluminescence of PbS-EuS superlattices deposited on (111)BaF_{2} substrates are presented. Quantum-size and deformation effects in photoluminescence spectra are observed. The strain-induced gap shift and valence-band offset is determined from experimental results. A strong stimulated photoluminescence with relatively low threshold was observed. It was found that the photocarriers generated in EuS barrier strongly affect the population of PbS subbands.

4

Structure and Electron-Transport Properties of Photoresist Implanted by Sb^{+} Ions

100%

Vabishchevich N., Brinkevich D., Volobuev V., Lukashevich M., Prosolovich V., Sidorenko Y., Odzhaev V., Partyka J.

Acta Physica Polonica A

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2011

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vol. 120

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issue 1

46-48

EN

Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1 × 10^{15} ÷ 5 × 10^{16} cm^{-2} with the ion current density 4 μA/cm^2 have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.

5

Magnetization Studies of Antiferromagnetic Interlayer Coupling in EuS-SrS Semiconductor Multilayers

100%

Samburskaya T., Sipatov A., Volobuev V., Dziawa P., Knoff W., Kowalczyk L., Szot M., Story T.

Acta Physica Polonica A

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2013

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vol. 124

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issue 1

133-136

EN

Temperature and magnetic field dependence of magnetization of EuS-SrS multilayers grown epitaxially on KCl (001) substrate is experimentally studied by superconducting magnetometry technique. In these lattice-matched semiconductor heterostructures EuS layers are ferromagnetic quantum wells whereas SrS layers are nonmagnetic spacer barriers. The multilayers composed of EuS layers with thickness 3.5-5 nm and SrS layers (thickness 0.5-10 nm) exhibit ferromagnetic transition at 17 K. In the multilayers with ultrathin SrS spacers (0.5-1 nm) a nonmonotonic temperature dependence of magnetization as well as a characteristic switching in magnetic hysteresis loops is observed. These experimental findings are explained considering antiferromagnetic interlayer coupling between ferromagnetic EuS layers via nonmagnetic SrS spacers. The strength of this coupling is determined based on model magnetization calculations.

6

Magnetic and Structural Properties of EuS-PbS Multilayers Grown on n-PbS (100) Substrates

81%

Chernyshova M., Łusakowska E., Domukhovski V., Grasza K., Szczerbakow A., Wrotek S., Kowalczyk L., Story T., Smits C., Swagten H., De Jonge W., Palosz W., Sipatov A., Volobuev V.

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issue 4-5

609-615

EN

Magnetic properties of semiconductor EuS(t)-PbS(d)-EuS(t) ferromagnetic trilayers (t=30÷300Å and d=7.5÷70Å) grown on n-type monocrystalline PbS (100) substrate were studied by SQUID magnetometry and ferromagnetic resonance technique yielding, in particular, the dependence of the ferromagnetic Curie temperature on the thickness of the EuS layer. Structural parameters of layers were examined by X-ray powder diffraction analysis. A high structural quality of the substrate and the multilayer was verified by the measurements of the X-ray rocking curve width indicating the values of the order of 100 arcsec and by atomic force microscopy revealing the presence on the cleft PbS surface regions practically flat in the atomic scale over the area of 1×0.1μm^2.

7

Magnetic Properties of EuS-SrS Semiconductor Multilayer Structures

81%

Szot M., Kowalczyk L., Deptuła P., Domukhovski V., Osinniy V., Smajek E., Szczerbakow A., Sipatov A., Volobuev V., Fedorov A., Story T.

Acta Physica Polonica A

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2007

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vol. 112

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issue 2

419-424

EN

Magnetic and structural properties of EuS-SrS semiconductor multilayers were studied by SQUID and magneto-optical Kerr effect magnetometry techniques and by X-ray diffraction method. The multilayers composed of monocrystalline, lattice matched ferromagnetic EuS layers (thickness 35-50Å) and nonmagnetic SrS spacer layers (thickness 45-100Å) were grown epitaxially on KCl (001) substrates with PbS buffer layer. Ferromagnetic transition in EuS-SrS multilayers was found at the Curie temperature T_c=17 K. The multilayers exhibit only weak in-plane magnetic anisotropy with [110] easy magnetization axis. Coercive field of EuS-SrS multilayers shows a linear increase with decreasing temperature. Magneto-optical mapping of magnetic hysteresis loops of the multilayers revealed good spatial homogeneity of their magnetic properties.

Refine search results

Interlayer Exchange Coupling in Semiconductor EuS-PbS Ferromagnetic Wedge Multilayers

Magnetic Properties of EuS/Co Multilayers on KCl and BaF₂ Substrates

A Photoluminescence Study in PbS-EuS Superlattices

Structure and Electron-Transport Properties of Photoresist Implanted by Sb^{+} Ions

Magnetization Studies of Antiferromagnetic Interlayer Coupling in EuS-SrS Semiconductor Multilayers

Magnetic and Structural Properties of EuS-PbS Multilayers Grown on n-PbS (100) Substrates

Magnetic Properties of EuS-SrS Semiconductor Multilayer Structures