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Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors

100%
Starikov E., Shiktorov P., Gružinskis V., Varani L., Vaissière J., Palermo C., Reggiani L.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
408-411
FR
Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A_3B_5 compounds. This property is favorable for applications of nitrides in the THz frequency range.
2
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THz Emission Induced by an Optical Beating in Nanometer-Length High-Electron-Mobility Transistors

84%
Nouvel P., Torres J., Marinchio H., Laurent T., Palermo C., Varani L., Teppe F., Shiktorov P., Starikov E., Gruzinskis V.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
199-202
EN
Experimental results of direct measurement of resonant terahertz emission optically excited in InGaAs HEMT channels are presented. The emission was attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the HEMT channel at the frequency of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of f_0 ± 10 GHz (with f_0 from 0.3 up to 0.5 THz) detected by a Si-bolometer is found. The intensity of THz emission exhibits a nonlinear growth with increase of the pumping power.
3
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Small-Signal Characterization of FET/HEMT for Terahertz Applications

84%
Starikov E., Shiktorov P., Gružinskis V., Marinchio H., Nouvel P., Torres J., Palermo C., Chusseau L., Varani L., Ziadé P.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
203-205
EN
Calculations of the small-signal response of InGaAs HEMTs by using the hydrodynamic approach coupled with a pseudo-2D Poisson equation are performed. The spectra of small-signal admittance and impedance are found to demonstrate series of the resonant peaks corresponding to excitation of plasma waves. Possibilities and conditions of instability onset and THz signal detection are discussed.
4
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Plasma Oscillations in Nanotransistors: Application to THz Radiations Detection and Generation

84%
Marinchio H., Sabatini G., Palermo C., Nouvel P., Torres J., Varani L., Shiktorov P., Starikov E., Gružinskis V.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
103-106
EN
By means of a numerical hydrodynamic model, we consider the mechanism of collective plasma oscillations in a field-effect transistor channel under different excitations and biasing conditions. First, we consider the case of a device externally-excited by a harmonic optical beating or an electronic excitation under constant current condition at the drain. Both situations exhibit sharp resonances related to the first odd plasma modes illustrating the possibility of using the HEMT as a terahertz photomixer or detector. Then, we demonstrate that the frequencies, amplitudes and quality factors of the resonances can be strongly modified by varying the drain biasing condition from current- to voltage-driven operation.
5
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Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to~15~K

68%
Laurent T., Sharma R., Torres J., Nouvel P., Blin S., Palermo C., Varani L., Cordier Y., Chmielowska M., Faurie, J., Beaumont B.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
196-198
EN
We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 μs to 400 ns is found to be significant at room temperature whilst this behavior is inverted or even removed at 77 and 15 K temperatures.
6
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Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

68%
Laurent T., Sharma R., Torres J., Nouvel P., Blin S., Chusseau L., Palermo C., Varani L., Cordier Y., Chmielowska M., Faurie J., Beaumont B., Shiktorov P., Starikov E., Gruzinskis V.
Acta Physica Polonica A
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2011
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vol. 119
|
issue 2
107-110
EN
We report transmission measurements of GaN quantum well grown on sapphire substrate in the 220-325 GHz frequency band at low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found.
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