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1
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Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals

100%
Auleytner J., Skorokhod M., Datsenko L., Khrupa V.
Acta Physica Polonica A
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1996
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vol. 90
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issue 3
541-546
EN
Silicon crystals contained copper atoms included by diffusion way during high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observe the increase or decrease in the dislocation images widths in dependence on the time of diffusin annealing. In one case, during the more prolonged decoration process a build-up of decorating particles on dislocation occurs with widening of the topographic images of this dislocation. In another case (short time of decorating process) some compensation of defect deformation fields has been noticed (shortening of the mentioned images takes part). The obtained effects depend not only on the type of intrinsic impurities which take part in forming the Cottrell atmospheres but also on the duration of diffusion annealing. The observed results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated samples by means of the double-crystal spectrometer.
2
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X-ray Diffraction Investigations of Structure of Silicon Single Crystals after Irradiation by Heavy Ions

88%
Auleytner J., Khrupa V., Datsenko L., Krasulya S., Skorokhod M.
Acta Physica Polonica A
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1996
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vol. 89
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issue 3
301-307
EN
Structure distortions appearing near the surfaces of crystals irradiated by high energy ions (H, Kr, U) accelerated till energy of several MeV using respectively the accelerator U-120 (Kiev, Ukraine), the heavy ions accelerators (Caen, France and Darmstadt, Germany) were investigated by means of various X-ray diffraction methods (topography and diffractometry). Nonhomogeneous distribution of lattice distortions near the surfaces of irradiated crystals were discovered using these methods in all of the samples. Besides the barrier zones where the accelerated ions stopped, the wide distorted regions situated nearer the surface were found. The fine structure of different zones, their extents as well as the level of static Debye-Waller factor were determined. The depth distribution of this factor was compared with the results obtained by using the edge contrast measurements some years ago. This permitted us to draw conclusions about some relaxation of elastic strains in the interference regions after many years.
3
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Investigation of Near Surface Distortions in Si Single Crystals by Means of Spatial Distribution Analysis of Reflected Beams

88%
Khrupa V., Krasulya S., Machulin V., Datsenko L., Auleytner J.
Acta Physica Polonica A
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1996
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vol. 89
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issue 3
309-313
EN
A diffractometrical method for quantitative evaluation of structure perfection level in silicon single crystals containing various types of near surface distortions is described. The method is based on the spatial distribution analysis of the reflected intensity in the Bragg case of diffraction. To implement the proposed approach one has to satisfy the condition of the so-called low X-ray absorption because in this case the penetration depth of diffracted radiation exceeds the corresponding value of extinction length. It permits us to obtain a remarkable value of noncoherent reflectivity due to defects placed in deep (on the extension of absorption length) regions of a crystal and therefore, to increase the sensitivity of scattering for low distortions of crystal lattice. Using the method described here the extension of various disturbed layers as well as the level of the static Debye-Waller factor of a crystal can be determined. The effect of surface distortions caused by mechanical treatment and the influence of the following thermal annealing as well as irradiation by high energy protons on the defective structure of the samples were investigated.
4
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X-Ray Structure Perfection Diagnostics of Slightly Distorted Silicon Crystals in the Bragg Case of Diffraction

88%
Khrupa V., Krasulya S., Machulin V., Datsenko L., Auleytner J.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
981-985
EN
A new approach to structure perfection diagnostics of dislocation-free silicon crystals has been developed using the Bragg case of diffraction. The approach is being based on successive measurements of integral reflectivity and the spatial intensity distribution of reflected beam on the same diffraction planes of a real crystal by means of a single crystal diffractometer.
5
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Integral Structure Perfection Diagnostics of Single Crystals Using Two Wavelengths of X-Ray Spectrum

88%
Datsenko L., Krasulya S., Machulin V., Auleytner J., Khrupa V.
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EN
A new approach to determination of microdefect structure parameters by means of single crystal diffractometer is proposed. The approach is based on the measurements of the integral reflectivity of a sample for two selected X-ray wavelengths providing with the approximations of thin and thick crystal, respectively.
6
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Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure

76%
Datsenko L., Khrupa V., Krasulya S., Misiuk A., Härtwig J., Surma B.
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EN
The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 K under hydrostatic pressure up to 10^{9} Pa was investigated by X-ray diffractometry and topography supplemented by the method of absorption of infrared rays. Such treatment suppresses dissolution of oxygen-related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples.
7
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Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions

64%
Datsenko L., Żymierska D., Auleytner J., Klinger D., Machulin V., Klad'ko V., Melnik V., Prokopenko I., Czosnyka T., Choiński J.
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vol. 96
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issue 1
137-142
EN
The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10^{14} particles/cm^{2} is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α_{1}}, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
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