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issue 1
234-237
EN
Temperature sensitive thick films based on spinel-type semiconducting ceramics of different chemical composition Cu_{0.1}Ni_{0.1}Co_{1.6}Mn_{1.2}O_{4} (with p^{+}-types of electrical conductivity), Cu_{0.1}Ni_{0.8}Co_{0.2}Mn_{1.9}O_{4} (with p-types of electrical conductivity) and their multilayer p^{+}-p structures were fabricated and studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170°C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p- and p^{+}-conductive thick films. The p^{+}-p structures were of high stability, the relative electrical drift was not greater than 1%.
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