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Optically-Determined Exciton Transport in GaAs Structures

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Gililand G., Wolford D., Hjalmarson H., Petrovic M., Klem J., Kuech T., Northrop G., Bradley J.
Acta Physica Polonica A
|
1993
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vol. 84
|
issue 3
409-417
EN
We have used an all-optical photoluminescence-imaging technique to measure excitonic transport in three types of GaAs structures in which the excitonic transitions vary from allowed direct-gap excitons to forbidden, doubly-indirect Type-II excitons. We f nd remarkable differences in the transport properties of these excitons. Our studies show that bulk free-exciton transport exhibits an anomalous laser power-dependent diffusivity, whereas quasi-2D interfacial excitons and Type-II cross-interface excitons do not. Additionally, we observe localization of cross-interface excitons at the potential disorder induced by the heterointerface roughness.
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