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Transients of Carrier Recombination and Diffusion in Highly Excited GaN Studied by Photoluminescence and Four-Wave Mixing Techniques

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Juršėnas S., Miasojedovas S., Kurilčik G., Žukauskas A., Aleksiejūnas R., Malinauskas T., Sūdžius M., Jarašiūnas K.

Acta Physica Polonica A

2005

vol. 107

issue 2

240-244

Time-resolved photoluminescence and four-wave mixing techniques have been combined for studies of carrier relaxation dynamics in a highly photoexcited GaN epilayer. For a moderate excitation density below 1 mJ/cm^2, carrier recombination was due to free carrier capture by deep traps. The characteristic time of carrier capture,τ_e=550 ps, was measured under deep trap saturation regime. The ambipolar diffusion coefficient for free carriers, D=1.7 cm^2/s, was estimated from the analysis of the transients of the light-induced gratings of various periods. A complete saturation of the four-wave mixing efficiency was observed for the excitation energy density exceeding 1.5 mJ/cm^2. The latter saturation effect was shown to be related to electron-hole plasma degeneration, which results in a significant enhancement of carrier recombination rate due to onset of stimulated emission.

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1 Acta Physica Polonica A

1 2005

1 Aleksiejūnas R.

1 Jarašiūnas K.

1 Juršėnas S.

1 Kurilčik G.

1 Malinauskas T.

1 Miasojedovas S.

1 Sūdžius M.

1 Žukauskas A.

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Transients of Carrier Recombination and Diffusion in Highly Excited GaN Studied by Photoluminescence and Four-Wave Mixing Techniques