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1

Effect of Temperature on the Ion Beam Induced Luminescence of Oxide Powders Doped with Rare Earth Elements

100%

Gawlik G., Panczer G., Moncoffre N., Jagielski J.

Acta Physica Polonica A

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2013

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vol. 123

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issue 5

920-922

EN

The hydrogen ion beam induced luminescence of gadolinium oxide Gd_2O_3 doped with 1% of holmium (Ho) and 1% of bismuth (Bi) was investigated. Degradation of the holmium related 549 nm ion beam induced luminescence line intensity during hydrogen ion irradiation was observed. Two different mechanisms of the ion beam induced luminescence degradation has been proposed: the first one related to the accumulation of ion induced target material damage and the second mechanism related to the target temperature growth during ion beam bombardment. The experimental method for separation of both mechanisms effects was proposed and demonstrated.

2

White Beam Synchrotron Topographic Characterisation of Silicon Wafers Directly Bonded by Oxide Layer

88%

Wierzchowski W., Wieteska K., Graeff W., Gawlik G., Pawłowska M.

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vol. 96

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issue 2

283-288

EN

Various types of layer structures obtained by direct bonding of oxidised silicon wafers were studied by means of different X-ray topographic methods using white synchrotron beam and the observation of selective etching pattern using scanning electron microscopy and optical microscopy with Nomarski contrast. In the present investigation the particularly important results were obtained with synchrotron section topography, which revealed different defects caused by bonding of thick wafers, in particular the dislocations and microcracks. The different situation was observed in the case of bonding with a very thin layer separated from a silicon substrate by high dose proton implantation. In this case a thin layer accommodated practically all induced strain and the bonded oxidised thick substrate remained defect-free in its inner volume.

3

Ion and Electron Beam Induced Luminescence οf Rare Earth Doped YAG Crystals

88%

Gawlik G., Sarnecki J., Jóźwik I., Jagielski J., Pawłowska M.

Acta Physica Polonica A

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2011

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vol. 120

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issue 1

181-183

EN

The aim of this work was the evaluation of ion-beam induced luminescence for the characterization of luminescent oxide materials containing rare earth elements. The yttrium aluminium garnet epilayers doped with Nd, Pr, Ho, and Tm atoms were used. The ion-beam induced luminescence spectra were excited using 100 keV H_2^{+} ion beam and were recorded in the wavelengths ranging from 300 nm up to 1000 nm. The separate parts of the surface of the same samples were used for ion-beam induced luminescence and cathodoluminescence experiments. Cathodoluminescence spectra have been recorded in the range from 370 nm up to 850 nm at 20 keV e-beam in scanning electron microscope equipped with a grating spectrometer coupled with a photomultiplier. The observed narrow ion-beam induced luminescence lines can be ascribed to the well known radiative transitions in the rare-earth ions in the YAG crystals. The cathodoluminescence spectra reveal essentially the same emission lines as ion-beam induced luminescence. The decrease of the ion-beam induced luminescence lines intensity has been observed under the increasing ion fluences. The ion-beam induced luminescence may be used for characterization of transparent luminescent materials as an alternative method for cathodoluminescence and can be especially useful for observation of ion-beam damage formation in crystals.

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3 Acta Physica Polonica A

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3 Gawlik G.

2 Jagielski J.

2 Pawłowska M.

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1 Moncoffre N.

1 Panczer G.

1 Sarnecki J.

1 Wierzchowski W.

1 Wieteska K.

Effect of Temperature on the Ion Beam Induced Luminescence of Oxide Powders Doped with Rare Earth Elements

White Beam Synchrotron Topographic Characterisation of Silicon Wafers Directly Bonded by Oxide Layer

Ion and Electron Beam Induced Luminescence οf Rare Earth Doped YAG Crystals