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Photo-Effects in In/p-CuInSe_{2} Schottky-Type Junction

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Opanowicz A., Kościelniak-Mucha B.
Acta Physica Polonica A
|
1991
|
vol. 79
|
issue 2-3
411-414
EN
The voltage-dependent photocurrent and the short-circuit photocurrent generated by the modulated light in the In/p-CuInSe_{2} junction were measured. The results suggest that the recombination of carriers occurs in the metal-semiconductor interface as well as in the recombination centres present in the space charge region of the junction. Both the interface recombination and the recombination in the centres can be modified by illumination of the junction.
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