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High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors

100%

Cola A., Nabet B., Chen X., Quaranta F.

In this work we review the properties of a class of metal-semiconductor-metal photodetectors based on heterojunction structures. Particularly, an AlGaAs/GaAs device is detailed in which the absorption region is in the GaAs layer, and a two-dimensional electron gas is formed at the heterointerface due toδ-doping of the widegap material. This heterostructure metal-semiconductor-metal photodetector also contains an AlGaAs distributed Bragg reflector that forms a resonant cavity for detection at 850 nm. The beneficial effect of the two-dimensional electron gas in the GaAs absorption layer in terms of speed and sensitivity is demonstrated by comparing samples with and without doping in the AlGaAs layer. The design and the physical properties of the grown epitaxial structure are presented, together with the static and dynamic characteristics of the device in time domain. In particular, photocurrent spectra exhibit a 30 nm wide peak at 850 nm, and time response measurements give a bandwidth over 30 GHz. A combination of very low dark current and capacitance, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes this device suitable for a number of application areas, such as Gigabit and 10 Gigabit Ethernet, wavelength division multiplexing, remote sensing, and medical applications.

Photoelectrical Properties of 1.3μm Emitting InAs Quantum Dots in InGaAs Matrix

64%

Persano A., Cola A., Vasanelli L., Convertino A., Leo G., Cerri L., Frassanito M., Viticoli S.

Acta Physica Polonica A

2005

vol. 107

issue 2

381-387

We present a study of photoelectrical properties of the Stranski-Krastanow InAs quantum dots embedded in an InGaAs matrix with low In content, emitting at about 1.3μm. The ground-state electron-hole transition of the dots was investigated as a function of the temperature in presence of electric fields parallel and perpendicular to the plane of the dots by photocurrent spectroscopy. Microphotoluminescence measurements were also carried out, allowing us to evidence carrier capture from the GaAs matrix into the dots.

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2 Acta Physica Polonica A

2 2005

2 Cola A.

1 Cerri L.

1 Chen X.

1 Convertino A.

1 Frassanito M.

1 Leo G.

1 Nabet B.

1 Persano A.

1 Quaranta F.

1 Vasanelli L.

1 Viticoli S.

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High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors

Photoelectrical Properties of 1.3μm Emitting InAs Quantum Dots in InGaAs Matrix