The tunneling probability through a double-barrier ZnSe/ZnTe structure is calculated using both wave-packet time dependent quantum mechanics and stationary planar-wave approximation. The obtained I-V characteristics are compared and very good consistence in resonant peaks width and position is observed. The absolute value of tunneling probability obtained in time-dependent and stationary approach is also similar.
The tunneling probability in double barrier heterostructures can be affected by various effects. One of the most significant is presence of the accumulation layer placed before the structure. The presented time-dependent results show that charge trapped in the accumulation region oscillates in the triangular quantum well and tunnels sequentially through the double barrier structure resulting in periodical changes of the charge density right to the heterostructure.
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