A band electron interacting with N electrons in a d-shell of a paramagnetic impurity in zinc-blende type semiconductors was considered. The hybridization of band and d-states in the crystal field and the nonorthogonality mechanisms of interaction were examined in addition to the standard direct exchange. The Heisenberg-type form was derived for the interaction between a Γ_8-electron and an impurity with a half-filled d-shell. The domination of the hybridization mechanism explains the observed sign of the effective exchange constant for Γ_8 electrons in diluted magnetic semiconductors (DMS) and the difference in magnitude of this constant for Mn^{2+} and Fe^{3+} ions in HgSe.
Fe(2 ML)/V(y ML) and interleaved Fe(2 ML)/V(y ML)/Fe(3 ML)/V(y ML) superlattice systems with spacer thicknesses, y, (4 ≤ y ≤ 17) were investigated macro-magnetically to estimate the coupling strength and the magnetoresistance in these materials, and particularly in the antiferromagnetically coupled monolayers. The results from the magnetic and magnetoresistive measurements indicate that adding one monolayer of Fe increases the antiferromagnetic coupling and the magnetoresistivity ratio from 0.0075 mJ/m2 at 20 K and 2 % at 10 K for Fe(2 ML)/V(y ML), to 0.05 mJ/m2 and 2.5 % for Fe(2 ML)/V(y ML)/Fe(3 ML)/V(y ML) at the same temperatures. Both systems exhibit in-plane magnetic and magnetoresistive isotropy, therefore the increase of the conferred physical parameters is attributed mainly to the stresses at the interface as governing mechanisms over the magnetoelastic forces.
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