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Effect of Layer Thickness on I-V Characteristics of GaInP Nanofibers Fabricated by Electrospinning on n-Si Substrates

100%
Çiçek Bezir N., Evcin A., Okçu H., Kayali R., Kaleli M., Aldemir D.
Acta Physica Polonica A
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2017
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vol. 132
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issue 3
638-641
EN
GaInP nanofibers were formed on n-Si substrates by electrospinning method, using constant voltage (25 kV), height (6 cm), and flow rate (0.3 ml/h) during various process times (of 10, 20, 25 minutes). Characterization of the prepared samples was performed by X-ray diffraction, differential scanning calorimetry/thermal gravimetric analysis, scanning electron microscopy, and energy dispersive X-ray spectrometry. Furthermore, the current-voltage measurements of the GaInP/n-Si samples have been carried out. The obtained results show that I-V characteristics of all GaInP/n-Si samples fabricated with three thicknesses of GaInP layers are rather in a good agreement with the theory and that they exhibit rectifying properties.
2
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Pt coated Cr2O3 thin films for resistive gas sensors

84%
Kasikov A., Gerst A., Kikas A., Matisen L., Saar A., Tarre A., Rosental A.
Open Physics
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2009
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vol. 7
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issue 2
356-362
EN
The resistive response of atomic layer deposited thin epitaxial α-Cr2O3(0 0 1) films, to H2 and CO in air, was studied. The films were covered with Pt nanoislands formed by electron-beam evaporation of a sub-monolayer amount of the material. The gas measurements were performed at 250°C and 450°C. These temperatures led to different proportion of chemical states, Pt2+ and Pt4+, to which the Pt oxidized. The modification was ascertained by the X-ray photoelectron spectroscopy method. As a result of the modification, the response was fast at 250°C, but slowed at 450°C. A disadvantageous abundance of Pt4+ arising at 450°C in air could be diminished by high-vacuum annealing thus restoring the response properties of the system at 250°C.
3
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Scanning tunneling spectrosopy study of DNA conductivity

84%
Kratochvílová I., Král K., Bunček M., Nešpůorek S., Todorciuc T., Weiter M., Navrátil J., Schneider B., Pavluch J.
Open Physics
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2008
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vol. 6
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issue 3
422-426
EN
We used STM to study the conductivity of 32 nucleotide long DNA molecules chemically attached to a gold surface. Two oligonucleotides containing all four base types namely G, A, C, T, one single stranded and one double helical, all showed conductance data significantly higher than DNA containing only T and A that were either single stranded d(T32) or double helical d(T32).d(A32) in confirmation. Within each sequence group, the conductivity of the double helical form was always higher than that of the single strand. We discuss the impact of structure, particular base stacking and affinity to the phase transition.
4
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Germanium segregation in CVD grown SiGe layers

84%
Novikau A., Gaiduk P.
Open Physics
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2010
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vol. 8
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issue 1
57-60
EN
A 2D layer of spherical, crystalline Ge nanodots embedded in a SiO2 layer was formed by low pressure chemical vapour deposition combined with furnace oxidation and rapid thermal annealing. The samples were characterized structurally by using transmission electron microscopy and Rutherford back scattering spectrometry, as well as electrically by measuring C-V and I-V characteristics. It was found that formation of a high density Ge dots took place due to oxidation induced Ge segregation. The dots were situated in the SiO2 at the average distance 5–6 nm from the substrate. Strong evidence of charge storage effect in the crystalline Ge-nanodot layer was demonstrated by the hysteresis behavior of the high-frequency C-V curves.
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