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Characterization of Ag-TiO₂ Powders Prepared by Sol-Gel Process

100%

Evcin A., Arlı E., Baz Z., Esen R., Sever E.

Acta Physica Polonica A

2017

vol. 132

issue 3

608-611

In this study, microstructure and electrical properties of Ag-TiO₂ powders, which were prepared by a simple sol-gel method, are investigated. The sol was prepared from titanium iso-propoxide, Ti(OC₃H₇)₄ in iso-propanol (CH₃CHOHCH₃), used as solvent. AgNO₃ was used as the precursor for Ag. For the structural studies, the corresponding gels were allowed to dry naturally for about seven days, dried in an oven at 180°C for 30 min and then calcined at different temperatures (900, 1000 and 1100°C). The Ag-TiO₂ nanoparticles were characterized using differential thermal analysis/thermal gravimetry, scanning electron microscopy, energy-dispersive X-ray analysis and X-ray diffraction. The results X-ray diffraction indicate that pure Ag and TiO₂ powders are in rutile phase. However, calcination temperature had not significantly affected the crystalline structure of TiO₂. Scanning electron microscopy images of powders show an aggregation of small spherical particles of dispersed sizes. Annealing of the Ag-TiO₂ sample at high temperature produced more spherical particles, which aggregated to form bigger particles with porous structures. The electrical properties of the samples were measured using HMS-3000 Hall measurement system. The samples were found to be of n-type. The conductivity of TiO₂ samples have been explicitly increasing with calcination temperature and with Ag doping.

Analytical Threshold Voltage Model Considering Quantum Size Effects for Nanocrystalline Silicon Thin Film Transistors

64%

Remmouche R., Fates R., Bouridah H.

Acta Physica Polonica A

2017

vol. 132

issue 4

1230-1233

This paper presents an analytical model calculating the threshold voltage in nanocrystalline silicon (nc-Si) thin film transistors by considering a granular morphology of silicon nanocrystallites forming the channel and using the two-dimensional the Poisson equation. The numerical calculations demonstrate that, according to the quantum size effects on both dielectric constant and band gap, the threshold voltage values are strongly related to the silicon crystallites structure. To justify the validity of our model suitable for implementation in circuit simulators such as SPICE, the simulation results obtained are compared with the available research data and they shows a satisfactory match, thus, demonstrating the validity of our model.

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2 Acta Physica Polonica A

2 2017

1 Arlı E.

1 Baz Z.

1 Bouridah H.

1 Esen R.

1 Evcin A.

1 Fates R.

1 Remmouche R.

1 Sever E.

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Characterization of Ag-TiO₂ Powders Prepared by Sol-Gel Process

Analytical Threshold Voltage Model Considering Quantum Size Effects for Nanocrystalline Silicon Thin Film Transistors