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Effect in Coherently Strained B-Doped (001)SiGe/Si Heterostructures

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Knizhny V. I., Mironov O. A., Makarovskii O. A., Braithwaite G., Mattey N. L., Parker E. H. C., Phillips P. J.

Acta Physica Polonica A

1995

vol. 88

issue 4

779-782

We report on two methods which illustrate piezoelectric effects in the strained Si (100)Si_{1-x}/Ge_{x} system. The non-contact sound excitation technique has been used to reveal the conversion of a high-frequency electric field E into acoustic waves at 77 K which can also be modulated by a dc applied bias voltage (±30 V). The sample was an MBE grown modulation doped Si_{0.88}Ge_{0.12}/(001)Si structure with a carrier sheet density 2.0 × 10^{11} cm^{-2} and a 4.2 K mobility 10500 cm^{2} V^{-1} s^{-1}. We deduce that the observed high-frequency electric field acoustic wave conversion is associated with a piezoelectric-like effect possibly due to ordering in the strained SiGe alloy or symmetry breaking effect near Si/SiGe interface. Further evidence is provided by the existence of a piezoelectric phonon interaction in the hot hole energy relaxation mechanism determined from high electric field Shubnikov de Haas He^{3} low temperature measurements.

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1 Acta Physica Polonica A

1 1995

1 Braithwaite G.

1 Knizhny V. I.

1 Makarovskii O. A.

1 Mattey N. L.

1 Mironov O. A.

1 Parker E. H. C.

1 Phillips P. J.

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Effect in Coherently Strained B-Doped (001)SiGe/Si Heterostructures