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Inelastic Electron Scattering in Double-Barrier Resonant Tunneling Structure Revealed with Photoexcitation

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Figielski T., Mąkosa A., Wosiński T., Harness P., Singer K.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
817-819
EN
We investigated current-voltage and photocurrent-voltage characteristics of a double-barrier resonant tunneling structure based on AlGaAs. To explain the observed "double-step" feature of the characteristics, we have proposed a mechanism including a multiple phonon emission of an electron dwelling in the quantum well.
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